Arup Samanta

Refereed Journal Papers:

36. Nanoscale effects in the room temperature UV-visible photoluminescence from silica particles and its cancer cell imaging,

Divya Rani, Deepika Singh,Anil Kumar,Monika Dhiman,Anjali Saini, Partho Biswas, Rachana, Partha Roy, Mrinal Dutta, and Arup Samanta* Bioconjugate Chemistry, 2025 (Accepted)

35. Ultra-sensitive Short-Wave Infrared Single-Photon Detection using a Silicon Single-Electron Transistor

P. Sudha, S. Miyagawa, A. Samanta,^* and D. Moraru^*, Advanced Electronic Materials, 2025 (Accepted)

34. Transport Spectroscopy of Donor/Quantum Dot InteractiveSystem in Silicon Nano-Transistors

Soumya Chakraborty, Pooja Yadav, Daniel Moraru, and Arup Samanta* Advanced Quantum Technologies 2024, 2400011. https://doi.org/10.1002/qute.202400011

33. Spin Filtering and Quantum Transport with Transition Metal-Doped Hydrogenated Silicon Quantum Dot

Hemant Arora and Arup Samanta* Appl. Phys. Lett., 125, 122403 (2024)

Preprint: http://arxiv.org/abs/2402.17461

32.Understanding the basis of thermo-stability for enzyme “nanoluc” towards designing industry-competent engineered variants

Adwaita S. R. Nair, Arup Samanta, Saugata Hazra^*Journal of Biomolecular Structure & Dynamics (Accepted) https://doi.org/10.1080/07391102.2024.2319675

31. Room Temperature Quantum Control of N-Donor Electrons at Si/SiO2 Interface

S Chakraborty, A Samanta*, Advanced Quantum Technologies 2024, 2300349,

https://doi.org/10.1002/qute.202300349

Preprint https://arxiv.org/abs/2401.11475

30. Weakly Confined Silicon Nanodiscs as Material System for THz Absorption: Analytical Study

Pooja Sudha, Mayank Goswami, Arup Samanta* Physica Scripta, 2024 (Accepted) DOI 10.1088/1402-4896/ad275c

29. Diameter and gap controlled fabrication of periodic SiMW/SiNW arrays: a broadband absorber for high efficiency silicon solar cell.

Divya Rani, Anil Kumar, Anjali Saini, Deepika Singh, Neeraj Joshi, Ravi Kumar Varma, Mrinal Dutta, Arup Samanta* Optical Materials (2023) 145, 114483.

28. Nitrogen in Silicon for Room Temperature Single Electron Tunneling Devices

Pooja Yadav,Hemant Arora and Arup Samanta*; , Appl. Phys. Lett.; 122, 083502 (2023).

27. First-principles study of room-temperature ferromagnetism in transition-metal doped H-SiNW

Hemant Arora and Arup Samanta*; Physical Chemistry Chemical Physics, 25 (4), 2999-3010 (2023).

26. Inelastic Cotunneling in the Coulomb-Blockade Transport of Donor-Atom Transistors

Pooja Yadav, Soumya Chakraborty, Daniel Moraru, Arup Samanta*; J. Vacuum Science & Technology B 41, 012208 (2023); https://doi.org/10.1116/5.0097509 Editor's Pick for the Journal Homepage.

25. Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors

Pooja Yadav, Soumya Chakraborty, Daniel Moraru, Arup Samanta*; Nanomaterials, 12, 4437 (2022). https://doi.org/10.3390/nano12244437

24. Lithography free method to synthesize quasi-periodic silicon inverted-pyramid arrays: A broad band light trapper for high efficiency thin silicon solar cells

Anil Kumar, Divya Rani, Anjali Saini, Neeraj Joshi, Ravi Kumar Varma, Mrinal Dutta, Arup Samanta*; Solar RRL (Accepted), 2024, DOI: 10.1002/solr.202400014 https://doi.org/10.48550/arXiv.2203.10604

23. Determination of exchange integrals and effect of cationic site occupancy (8b/24d) on the structural and magnetic properties of nanocrystalline Mn-doped Gd2O3

A Karmakar, H Arora, M Nath, S Sutradhar, BJ Sarkar, G Mandal, A Samanta*, A Bandyopadhyay*, J. Alloys & Compounds; 931, 2023, 167475.

22. Fabrication of periodic, flexible and porous silicon microwire arrays with controlled diameter and spacing: Effects on optical properties;

Anjali Saini, Mohammed Abdelhameed, Divya Rani, Wipakorn Jevasuwan, Naoki Fukata, Premshila Kumari, Sanjay K Srivastava, Prathap Pathi, Arup Samanta, Mrinal Dutta; Optical Materials; 134, 113181 (2022).

21. Coulomb-blockade transport in selectively-doped Si nano-transistors;

Adnan Afiff, Arup Samanta, Arief Udhiarto, Harry Sudibyo, Masahiro Hori, Yukinori Ono, Michiharu Tabe, and Daniel Moraru; ; Appl. Phys. Express, 12, 085004 (2019). Link

20. Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors, Arup Samanta, Manoharan Muruganathan, Masahiro Hori, Yukinori Ono, Hiroshi Mizuta, Michiharu Tabe, and Daniel Moraru; Appl. Phys. Lett. 110, 093107 (2017). Link

19. Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors

Arup Samanta, Daniel Moraru, Takeshi Mizuno, and Michiharu Tabe; Scientific Reports 5, 17377 (2015). Link

18. Physics of strongly-coupled dopant-atoms in nanodevices

Daniel Moraru, Krzysztof Tyszka, Yuki Takasu, Arup Samanta, Takeshi Mizuno, Ryszard Jablonski and Michiharu Tabe; Int. J. Technol. 6, 1057 (2015). Link

17. Effect of Individual Dopants in Nano-SOI-MOSFETs and Nano-pn-Diodes

Michiharu Tabe, Daniel Moraru, Arup Samanta, Krzysztof Tyszka, H. N. Tan, Yuki Takasu, Ryszard Jab?o?ski, Le The Anh, Hiroshi Mizuta, and Takeshi Mizuno; ECS Transactions 69, 189-195 (2015). Link

16. Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nanodevices

Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Le The Anh, Muruganathan Manoharan, Takeshi Mizuno, Ryszard Jablonski, Hiroshi Mizuta, and Michiharu Tabe; Nanoscale Res. Lett. 10 (1), 372 (2015). Link

15. Effect of selective doping on the dispersion of donor-induced quantum dots in Si nanoscale transistors

Krzysztof Tyszka, Daniel Moraru, Arup Samanta, Takeshi Mizuno, Ryszard Jab?o?ski, and Michiharu Tabe; Appl. Phys. Express 8 (9), 094202 (2015). Link

14. Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy

Krzysztof Tyszka, Daniel Moraru, Arup Samanta, Takeshi Mizuno, Ryszard Jab?o?ski, and Michiharu Tabe; J. Appl. Phys. 117 (24), 244307 (2015). Link

13. Tunneling transport in quantum dots formed by coupled dopant atoms

Daniel Moraru, Arup Samanta, Takahiro Tsutaya, Yuki Takasu, Takeshi Mizuno, and Michiharu Tabe; Adv. Mater. Res. 1117, 78-81 (2015). Link

12. Quantum Size Effects on the Optical Properties of nc-Si QDs Embedded in a-SiOx Matrix Synthesized by Spontaneous Plasma Processing

Debajyoti Das and Arup Samanta; Phys. Chem. Chem. Phys., 17 (7), 5063-5071 (2015). Link

11. Transport spectroscopy of coupled donors in silicon nano-transistors

Daniel Moraru, Arup Samanta, Le The Anh, Takeshi Mizuno, Hiroshi Mizuta and Michiharu Tabe; Scientific Reports 4, 6219 (2014). Link

10. Dopant-Atom-Based Tunnel SOI-MOSFETs

Michiharu Tabe, Moraru Daniel, Earfan Hamid, Arup Samanta, Le The Anh, Takeshi Mizuno and Hiroshi Mizuta; ECS Transactions 58 (9), 89-95 (2013). Link

9. SiOx nanowires with intrinsic nC-Si quantum dots: the enhancement of the optical absorption and photoluminescence

Arup Samanta and Debajyoti Das; J. Mater. Chem. C 1 (40), 6623 (2013). Link

8. Structural investigation of nC-Si/SiO_x:H thin films from He diluted (SiH₄ + CO₂) plasma at low temperature

Arup Samanta and Debajyoti Das; Applied Surface Science 259, 477– 485 (2012). Link

7. Size Effect on Electron Transport in NC-Si/SiOx Core/Shell Quantum Dots

Debajyoti Das and Arup Samanta; Materials Research Bulletin 47 (11), 3625–3629 (2012). Link

6. Changes in optical and electrical phenomena correlated to structural configuration in nanocrystalline silicon network

Arup Samanta and Debajyoti Das; J. Electrochem. Society. 158 (11), H1138 (2011). Link

5. Low Temperature Direct Plasma Synthesis of nC-Si/SiOx Core/Shell Quantum Dots

Arup Samanta and Debajyoti Das; Physics Teacher 53 (3-4), 25–31 (2011).

4. Effect of RF-Power on the formation and Size evolution of nC-Si Quantum Dots in an amorphous SiO_x matrix

Arup Samanta and Debajyoti Das; J. Mater. Chem., 21 (20), 7452 (2011). Link

3. Photoluminescent silicon quantum dots in core/shell configuration: synthesis by low-temperature and spontaneous plasma processing

Debajyoti Das and Arup Samanta; Nanotechnology, 22 (5), 055601 (2011). Link

2. Optical, electrical and structural properties of SiO:H films prepared from He dilution to the SiH₄ plasma

Arup Samanta and Debajyoti Das; J. Phys. D: Appl. Phys., 42 (21), 215404 (2009). Link

1. Studies on the structural properties of SiO:H films prepared from (SiH₄ + CO₂+He)-plasma in RF-PECVD

Arup Samanta and Debajyoti Das; Sol. Energy Mater. Sol. Cells 93 (5), 588 (2009). Link

Papers Presented at Symposia/Conference/Workshop:

72. Inelastic Cotunneling in the Coulomb-Blockade Transport in Donor-Atom Transistors

Pooja Yadav; Soumya Chakraborty; Daniel Moraru; Arup Samanta*; 2022 IEEE Silicon Nanoelectronics Workshop (SNW); DOI:10.1109/SNW56633.2022.9889041

71. Cotunneling assisted internal relaxation transport in the dopant atom transistor

Yadav, Pooja ; Moraru, Daniel ; Tabe, Michiharu ; Samanta, Arup*; APS March Meeting 2022, F50. 013; https://ui.adsabs.harvard.edu/abs/2022APS..MARF50013Y/abstract

70. Hydrogen Generation by Photocatalytic Water Splitting using Silicon Nanowires

S. Khamrai, D. Singh, A. Samanta*; AIP publishing Horizon, energy Storage and Conversion, Virtual Conference, August 4-6, 2021

69. Simulation of Inverted Pyramid Microstructure Arrays to Attain Ultra-low Reflection Spectra for the Application of High Efficient Silicon Solar Cell

Anil Kumar, Divya Rani, Mrinal Dutta, and A. Samanta*; Recent Advances and Innovations in Solar Energy (RaiSe), 2021, 2-4 Dec 2021, IITM, Chennai, India

68. Dopant atom transistors: present and future aspects

A. Samanta, D. Moraru and M. Tabe; International Conference on Advanced Nanomaterials and Nanotechnology (ICANN-2017), IIT GGuwahati, Assam, India; December 18-21, 2017

67. Analysis of Low-Temperature Single-Electron Tunneling Transport via Selectively-Doped a-Few-Donor QDs

A. Afiff, T. Hasan, T. Yamashita, A. Udhiarto, H. Sudibyo, D. Hartanto, A. Samanta, M. Tabe, and D. Moraru; Proc. 19th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov., 2017).

66. Toward Practical Realization of Dopant Atom Transistors;

A. Samanta, INUP Workshop, IIT Roorkee, Roorkee; 27-28 April, 2017.

65. Dopant Atom Electronics

A. Samanta; Emerging Trends in Computing, Communication and Control (ICETC32017), Department of Electronics & Communication, NSHM Knowledge Campus, Durgapur, West Bengal, India, March 15-16, 2017.

64. Silicon Single-Electron Tunneling Transistors with Dopant-Quantum-Dots: Perspectives for Room-Temperature Operation

D. Moraru, A. Afiff, T. Hasan, A. Samanta, and M. Tabe; Proc. 4^th Inter. Conf. Nanosci. Nanotechnol. (ICONN-2017) (SRM Univ., Kattankulathur, Chennai, India, Aug 09-11, 2017)

63. A Statistical Study on the Formation of A-Few-Dopant Quantum Dots in Highly-Doped Si Nanowire Transistors

Adnan Afiff, Tarik Hasan, Arup Samanta, Harry Sudibyo, Djoko Hartanto, Michiharu Tabe, Daniel Moraru; 15th International Conference on Quality in Research (QiR) 2017,

62. Probing the Impact of Donor Quantum Dots with High-Bias Stability Diagrams in Selecteively-Doped Si Nanoscale Transistors

A. Afiff, A. Samanta, T. Hasan, A. Udhiarto, D. Hartanto, H. Sudibyo, M. Tabe, and D. Moraru; Proc. of IEEE Silicon Nanoelectronics Workshop (Kyoto, Japan, June 04-05, 2017)

61. Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation

T. Hasan, A. Samanta, A. Afiff, L. T. Anh, M. Manoharan, M. Hori, Y. Ono, H. Mizuta, M. Tabe, and D. Moraru; The 64th JSAP Spring Meeting, 2017

60. Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature

D. Moraru, A. Samanta, T. Hasan, M. Manoharan, H. Mizuta2, and M. Tabe; Proc. 77^th JSAP Autumn meeting 2016 (Niigata City, Niigata, Japan, Sept.13-16, 2016) pp. 12-354

59. Single-Electron Tunneling Operation via A-Few-Donor Quantum Dots in SOI-FETs up to Room Temperature

A. Samanta, Y. Takasu, T. Mizuno, D. Moraru and M. Tabe; Proc. IEEE Silicon Nanoelectronics Workshop (Hawaii, USA, June 12-13, 2016)

58. Quantum-Tunneling in Dopant-Atom Devices Formed in Ultrathin Si Layers

D. Moraru, A. Samanta, L. T. Anh, M. Manoharan, T. Mizuno, K.Tyszka, R. Jablonski, H. Mizuta and M. Tabe; Proc. EMN Quantum Meeting on Energy Materials Nanotechnology (Phuket, Thailand, April 8-11, 2016)

57. Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature

D. Moraru, A. Samanta, T. Hasan, M. Manoharan, H. Mizuta2, and M. Tabe; Proc. 77^th JSAP Autumn meeting 2016 (Niigata City, Niigata, Japan, Sept.13-16, 2015) pp. 12-354

56. Single-Electron Tunneling Operation via A-Few-Donor Quantum Dots in SOI-FETs up to Room Temperature

A. Samanta, Y. Takasu, T. Mizuno, D. Moraru and M. Tabe; Proc. IEEE Silicon Nanoelectronics Workshop (Hawaii, USA, June 12-13, 2016)

55. Quantum-Tunneling in Dopant-Atom Devices Formed in Ultrathin Si Layers

54. Tunneling-transport operation of selectively-doped dopant-atom transistors up to room temperature

A. Samanta, D. Moraru, Y. Takasu, T. Mizuno and M. Tabe; Proc. 63^rd JSAP spring meeting 2015 (Tokyo Inst. Tech., Ookayama, Japan, March 19-22, 2016) 19p-P4-14

53. Dynamical modification of the equivalent circuit with the bias voltage in a multiple-dopant system

A. Samanta, D. Moraru, Y. Takasu, T. Mizuno, M. Tabe; Proc. 17^th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov. 17-18, 2015) pp. 85-89.

52. Atomic and Molecular Effects based on Dopants in Silicon Nanodevices,

D.Moraru, A. Samanta, K. Tyszka, M. Muruganathan, L. T. Anh, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe, Proc. Inter. Conf. Small Sci. (Phuket, Thailand, Nov 4-7, 2015) pp. 64-65

51. Effect of Individual Dopants in Nano-SOI-Mosfets and Nano-Pn-Diodes (Invited)

M. Tabe, D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta and T. Mizuno, Proc. 228^th ECS Meeting (Phoenis, USA, Oct 11-15, 2015) pp. 1093. Link

50. Impact of Dopant atoms on electron tunneling into nanoscale-transistor channels;

D. Moraru, A. Samanta, Y. Takasu, K. Tyszka, T. Mizuno, R. Jablonski, and M. Tabe, Proc. 14^th Inter. Conf. Global Res. Education (inter-Academia-2015) (Hamamatsu, Japan, Sept. 28-30, 2014) pp. 226-227.

49. High-temperature single-electron tunneling transport through dopant-cluster in narrow channel SOI-FETs

A. Samanta, D. Moraru, Y. Takasu, T. Mizuno, M. Tabe; Proc. 76^th JSAP Autumn meeting 2015 (Nagoya, Japan, Sept.15-16, 2015) pp. 12-356. Link

48. Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski and M. Tabe; Proc. 76^th JSAP Autumn meeting 2015 (Nagoya, Japan, Sept.15-16, 2015) pp. 12-354. Link

47. Physics of strongly-coupled dopant-atoms in nanodevices (Invited)

D. Moraru, K. Tyszka, Y. Takasu, A. Samanta, T. Mizuno, R. Jablonski and M. Tabe; Proc. 14^th Inter. Conf. Quality Res. (QiR)Mataram, Lombok, Indonesia, Aug 10-13, 2015) pp. C12.1

46. Recent progress in single-dopant atom devices (Invited)

M. Tabe, D. Moraru, A. Samanta, and T. Mizuno; Proc. 14^th Inter. Conf. Quality Res. (QiR)Mataram, Lombok, Indonesia, Aug 10-13, 2015) pp. C1.2

45. Dopant-cluster-assisted tunnelling in Si nanodevices (Invited)

M. Tabe, D. Moraru, A. Samanta, H.N. Tan, L.T. Anh, M. Manoharan, H. Mizuta, and T. Mizuno; Proc. Silicon Quantum Electronics Workshop 2015 (Takamatsu, Japan, Aug 3-4, 2015) pp. 43.

44. Tunneling transport through single- and clustered-dopants (Invited)

M. Tabe, D. Moraru, A. Samanta, H.N. Tan, L.T. Anh, M. Manoharan, H. Mizuta, and T. Mizuno; Proc. III Bilateral Italy-Japan Seminar (Silicon Nanoelect. Adv. Appl.) (Kyoto, Japan. June 16th, 2015)

43. Impact of diffused donor-clusters near Lead/Channel Boundary on High-Temperature Single-Electron Tunneling in Narrow SOI-FETs

D. Moraru, A. Samanta, Y. Takasu, K. Tyszka, T. Mizuno, R. Jablonski and M. Tabe; Proc. of IEEE Silicon Nanoelectronics Workshop (Kyoto, Japan, June 13-14, 2015) pp. 31-32. Link

42. Tunneling via Single and Coupled Dopant Atoms in Si Nanodevices (Invited)

D. Moraru, A. Samanta, K. Tyszka, L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe; Proc. EMN Quantum Meeting on Quantum technology (Bejing, China, April 14-17, 2015) pp. 62

41. Interactions of individual dopants and macroscopic quantum dots in weakly-doped nanoscale SOI-FETs

D. Moraru, Y. Takasu, A. Samanta, T. Mizuno, and M. Tabe; Proc. 62^rd JSAP spring meeting 2015 (Tokai Univ., Japan, March 11-14 2015) pp. 12-151. Link

40. Electric-field-assisted formation of an interfacial double-donor molecule in Si nano-transistors

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 62^rd JSAP spring meeting 2015 (Tokai Univ., Japan, March 11-14 2015) pp. 12-154. Link

39. Interaction between Dopant Atoms and Interface in Nanoscale Transistors (invited)

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 3rd Inter. Conf. Nanosci. Nanotechnol. (ICONN-2015) (SRM Univ., Kattankulathur, Chennai, India, Feb. 04-06, 2015) pp. 38-39.

36. Tunneling Transport via Dopant-induced Quantum Dots in Silicon Nano-devices (Invited)

D. Moraru, K. Tyszka, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe; Proc. 3rd Inter. Conf. Nanosci. Nanotechnol. (ICONN-2015)(SRM Univ., Kattankulathur, Chennai, India, Feb. 04-06, 2015) pp. 28-29

35. Interface-Assisted Merging of Two Donor Potential Wells in Ultrathin Si-Transistors

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. Inter. Symp. Toward Fut. Adv. Res. Shizuoka Univ. (Shizuoka Univ., Hamamatsu, Japan, Jan. 27-28, 2015) pp. 46

34. Atomic and Molecular Behavior in Tunneling Transport via Dopants in Nano-Transistors

D. Moraru, A. Samanta, Y. Takasu, T. Mizuno, and M. Tabe; Proc. Inter. Symp. Toward Fut. Adv. Res. Shizuoka Univ. (Shizuoka Univ., Hamamatsu, Japan, Jan. 27-28, 2015) pp. 47.

33. Silicon Nanoscale Transisitors with Dopant-Induced Quantum Dots

D. Moraru, K. Tyszka, A. Samanta, Y. Takasu, T. Tsutaya, T. Mizuno, R.Jablonski, and M. Tabe; Proc. 2^nd Inter. Conf. Nanoelect. Res. Edu. (Shizuoka Univ., Hamamatsu, Japan, 24-26 Nov., 2014) pp. 55-56.

32. Single Electron Transport in Double-Donor System at Si/SiO₂ Interface in Ultrathin SOI-FETs

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 16^th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov. 11-12, 2014) pp. PS1-8-(1-5).

31. Low-temperature spectroscopy of donor states in silicon nano-channels

D. Moraru, T. Tsutaya, Y. Takasu, A. Samanta, T. Mizuno, and M. Tabe; Proc. 16^th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov. 11-12, 2014) pp. S78-(1-5).

30. Impact of doping concentration regimes on low-temperature tunneling in nanoscale SOI-FETs

D. Moraru, T. Tsutaya, Y. Takasu, A. Samanta, L. T. Anh, M. Manoharan, T. Mizuno, H. Mizuta, and M. Tabe; Proc. 75^th JSAP Autumn meeting 2014 (Sapporo, Japan, Sept. 2014) pp. 13-191. Link

29. Effect of Dopants in Tunnel Barriers of Selectively Doped SOI-FETs

A. Samanta, D. Moraru, T. Tsutaya, L. T. Anh, M. Manoharan, T. Mizuno, H. Mizuta, and M. Tabe; Proc. 75^th JSAP Autumn meeting 2014 (Sapporo, Japan, Sept. 2014) pp. 13-192. Link

28. Control of electron transport regimes via single- and multiple-donors in nano-channel SOI-FETs

D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, L. T. Anh, K. Tyszka, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe; Proc. IEEE Silicon Nanoelectronics Workshop (Hawaii, USA, June 9-10, 2014) pp. 53-54. Link

27. Electron Transport in Double-Donor Systems at Si/SiO2 Interface in SOI-FETs

A. Samanta, D. Moraru, T. Mizuno and M. Tabe; Proc. IEEE Silicon Nanoelectronics Workshop (Hawaii, USA, June 9-10, 2014) pp. 73-74. Link

26. Tunneling transport in quantum dots formed by coupled dopant atoms

D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, T. Mizuno, and M. Tabe; Proc. 13^th Inter. Conf. Global Res. Education (inter-Academia) (Riga, Latvia, Sept. 10-12, 2014) pp. 45-46

25. Effect of electric field on single-electron tunneling transport in dopant-atom transistors

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 61st JSAP Spring Meeting 2014 (Kanagawa, Japan, March 17-20, 2014) pp. 13-267. Link

24. Tunneling transport spectroscopy of interacting donors in silicon nano-transistors

D. Moraru, A. Samanta, Y. Takasu, T. Tsutaya, L. T. Anh, T. Mizuno, H. Mizuta and M. Tabe Proc. 61st JSAP Spring Meeting 2014 (Kanagawa, Japan, March 17-20, 2014) pp. 13-263. Link

23. Dopant atom devices based on Si nanostructures (Invited)

M. Tabe, D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, and H. Mizuta; Proc. 7^th Inter. Work. New Group IV Semi. Nanoelect. JSPS Core-to-Core Prog. Joint Semicon., Atom. Contr. Proc. Ultralarge Scale Integration (Tohoku University, Sendai, Japan, Jan. 27-28, 2014)

22. Transport spectroscopy of selectively-doped dopant-based SOI Transistors

A. Samanta, D. Moraru, T. Mizuno¹, L. T. Anh, H. Mizuta and M. Tabe; Proc. Interdiscip. Domain Res. in Japan-Europe Part. (Shizuoka, Japan, Nov. 18-19, 2013) pp. 54.

21. Transport spectroscopy of selectively-doped interacting donors in silicon nano-transistors

D. Moraru, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta and M. Tabe; Proc. 15^th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov. 13-14, 2013) pp. PS1-7-(1-5).

20. Electric field effect on single-dopant-atom in Si FETs

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 15^th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov. 13-14, 2013) pp. S4-11-(1-5).

19. Dopant-Atom-Based Tunnel SOI-MOSFETs (Invited)

M. Tabe, D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta; Proc. 224^th ECS Meeting (San Francisco, USA, Oct. 27-Nov. 1, 2013) pp. 2243. Link

18. Dopant-atom-based SOI-transistors by selective nanoscale doping

A. Samanta, D. Moraru, Y. Kuzuya, K. Tyszka, L. T. Anh, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe; Proc. Inter. Conf. Sol. State Dev. and Mater. (SSDM) (Fukuoka, Japan, Sept. 24-27, 2013) pp. 788-789. Link

17. Fabrication of controlled dopant-induced quantum dots by thermal diffusion through nano-masks

D. Moraru, A. Samanta, T. Mizuno, and M. Tabe; Proc. 12^th Inter. Conf. Global Res. Educat. (Sofia University, Bulgaria, Sept. 23-27 2013) pp. 14.

16. Ab-initio study of interactive-donor states of multiple P-atoms in Si nanoplates

L. T. Anh, A. Samanta, D. Moraru, T. Mizuno, M. Muruganathan, M. Tabe, and H. Mizuta; Proc. 74^th JSAP Autumn meeting 2013 (Doshisha University, Kyoto, Japan, Sept.17-20, 2013) pp. 13-187. Link

15. Transport via dopant-quantum-dots fabricated by thermal diffusion through nano-masks

D. Moraru, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe; Proc. of 74^th JSAP Autumn meeting 2013 (Doshisha University, Kyoto, Japan, Sept.17-20, 2013) pp. 13-188. Link

14. Transport Spectroscopy of Dopant States in Randomly-Doped Single-Electron Transistors

A. Samanta, D. Moraru, E. Hamid, Y. Kuzuya, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe; Proc. 74^th JSAP Autumn meeting 2013 (Doshisha University, Kyoto, Japan, Sept.17-20, 2013) pp. 13-186. Link

13. Electrical characteristics of donor-induced quantum dots formed in nanoscale selectively-doped SOI-FETs

D. Moraru, A. Samanta, Y. Kuzuya, T. Nagasaka, T. Mizuno, and M. Tabe; Proc. of IEEE Silicon Nanoelectronics Workshop (Rihga Royal Hotel Kyoto, Japan, June 9-10, 2013) pp. 101-102.

12. Electron-tunneling operation of single-dopant-atom transistors at elevated temperature – Toward room temperature operation

D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe; Proc. IEICE Elect. Dev./ Silicon Dev. and Mater. (EDSDM) Meeting, (Shizuoka University, Hamamatsu, Japan, May 2013)

11. Persistence of single-donor effect up to room temperature in SOI-MOSFETs

A. Samanta, E. Hamid, D. Moraru, T. Mizuno, and M. Tabe; Proc. 60^th JSAP Spring Meeting 2013 (Kanagawa Institute of Technology, Japan, March 27-30, 2013) pp. 13-188. Link

10. Low Temperature Spontaneous Plasma Synthesis of nC-Si/SiO_x Core/Shell Quantum Dot Thin Films

D. Das and A. Samanta; Proc. Inter. Conf. Nanosci. Technol. (ICONSAT 2012) (Hotel Taj Krishna, Hyderabad, India, Jan. 20-23, 2012) pp. 137.

9. Quantum confinement effects on opto-electronic properties of nC-Si quantum dots

D. Das and A. Samanta; Proc. Inter. Conf. Fund. & Appl. of Nanosci. & Technol. (Jadavpur University, Dec. 9-11, 2010) pp. 185.

8. Size Effect on Opto-electronic Properties of nC-Si Quantum Dots

D. Das and A. Samanta; Proc. of IUMRS-ICEM 2010 (Seoul KINTEX, Korea, Aug. 22-27, 2010)

7. Highly conducting nC-SiO:H films prepared from (SiH₄ + CO₂+ He)-plasma by RF-PECVD

A. Samanta and D. Das; Proc. 18^th Intl. Photovol. Sci. & Eng. Conf. (Indian Association for the Cultivation of Science, Kolkata, Jan. 19-23, 2009). pp. 229-230.

6. Low Temperature Spontaneous Plasma Synthesis of nC-Si Quantum Dot in SiO_x Matrix and Nanowire.

A. Samanta and D. Das; Proc. MRSI Young Scientist Colloquium (CGCRI, Kolkata 2012)

5. Spontaneous Plasma Synthesis of nC-Si/SiO_x Core/Shell Quantum Dot Thin Films at Low Temperature

A. Samanta and D. Das; Proc. 56^th DAE Solid State Physics Symposium (SRM University, Kattankulathur, India, Dec. 19-23, 2011) pp. 119-122.

4. Low Temperature Direct Synthesis of nC-Si/SiO_x Core/Shell Quantum dots

A. Samanta and D. Das; Proc. 29^th Young Physicist Colloquium, IPS (SINP, Kolkata, India, Aug. 18-19, 2011)

3. Synthesis of silicon quantum dots by plasma CVD

A. Samanta and D. Das; Proc. 54^th DAE Sol. State Phys. Symp. (M. S. University, Vodadara, Dec. 14-18, 2009) pp. 341-342.

2. Properties of SiO:H films prepared from He-dilution to the SiH₄ plasma

A. Samanta and D. Das; Proc. Nation. Rev. Co-ordinat. Meet. (Govt. of India, SNBNCBS, Kolkata, March 12-14, 2009)

1. Transparent and conducting nanocrystalline SiO:H thin films for solar cells

A. Samanta and D. Das; Proc. Found. Day In-house Symp. (Indian Association for the Cultivation of Science, Kolkata, July 29, 2009)

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