Bulusu, Anand - Department of Electronics and Communication Engineering,Indian Institute of Technology Roorkee
Bulusu, Anand
Bulusu Anand Professor anand.bulusu@ece.iitr.ac.in +91-1332-245347
Areas of Interest
  • CMOS digital circuits, sub/near-threshold circuits and circuits and timing models, VLSI devices, novel device/circuit co-design methodologies, Mixed-signal Design, low voltage CMOS circuit design and modeling
Professional Background
FromPeriodPositionOrganisation
2006-01-011 year Sr. Research EngineerIIT Bombay
2007-01-011 year Sr. Design EngineeerFreescale Semiconductor India (Presently NXP Semiconductrs)
2008-01-016 years Assistant ProfessorIIT Roorkee
2014-01-01OngoingAssociate ProfessorIIT Roorkee
Multiple Posts
FromPeriodPositionOrganisation
2013-01-01OngoingFaculty AdvisorIEEE CAS Student Chapter, IIT Roorkee
2019-12-24OngoingChairman, DAPCECE, IIT Roorkee
2014-01-01OngoingBranch CounsellorIEEE Student Branch
Educational Details
DegreeSubjectUniversityYear
Ph.DMicroelectronicsIIT Bombay2006
Sponsored Research Projects
TopicFunding AgencyStart DatePeriod
Development and Efficient Characterization of FB and DT CMOS PDSOI Standard Cell LibrariesDST (AMT)2019-01Ongoing
A Design Methodology of Compute-In-Memory SRAM Macro for ML/AI Applications in Edge DevicesSemiconductor Research Corporation2020-07-01Ongoing
A PDSOI Analog Cell Library Consisting 2 stage OPAMPs and comparators designedISRO2020-10-01Ongoing
Development of 1.8/5V/10V/20V I/O Pads in SCL’s 0.18µm CMOS ProcessISRO2020-10-01Ongoing
Robust Methodology for Nanoscale VLSI Circuit Design Considering Layout Dependent VariatiationsDST2013-01Ongoing
A VLSI Standard Cell Characterization Methodology for CMOS Designs Considering Spatial and Temporal VariationsSemiconductor Research Corporation2018-01Ongoing
Negative capacitance fet (NCFET): fabrication/modeling/simulation for design of digital circuitsDST Nano Mission2019-01Ongoing
Nanoscale FinFET Device and Circuit Design MethodologyDST2009-0111 years 7 months
An Energy Efficient IOT Processor using an Optimized Near-Threshold Voltage Standard Cell LibraryIMPRINT-2 (SERB)2019-01Ongoing
Chips to Systems Design (SMDP)DIETY2015-01Ongoing
ICT AcademyDIETY2016-01Ongoing
Memberships
  • IEEE Circuits and Systems Society, Member
  • IEEE Electron Device Society, Member
  • IEEE Solid State Circuits Society, Member
Teaching Engagements
TitleCourse CodeClass NameSemester
Fundamentals of MicroelectronicsEC 344UGSpring
Analog CircuitsEC 205UGAutumn
Digital VLSI Circuit DesignEC 573PG + UGSpring
Semiconductor DevicesEC 142U.G.Spring
Analog VLSI Circuit DesignEC 581PGSpring
Automatic Control SystemsEC 222UGSpring
Electronic Network TheoryEC 291UGAutumn
Fundamentals of ElectronicsEC 102U.G.Spring
Projects and Thesis Supervised
Title of ProjectNames of Students
In-Memory Computation using SRAMNeha Gupta
Near threshold circuitsAnkur Singh
PHDs Supervised
TopicScholar NameStatus of PHDRegistration Date
NC-TunnelFET Devie-Circuit InteractionKhoiram JohnsonO2019-01
Back-end electronics for SensorsKartikayO2020-08
CMOS PLL DesignNeeraj MishraO2016-01
FinFET Device-Circuit interaction (Analog Domain)Shashank BancchorO2015-01
Tunnel FET Device-Circuit InteractionAbhishek AcharyaO2015-01
Circuit design for in-memory computingDinesh KushwahaO2018-01
Near Threshold Standard Cell Design and CharacterizationMahipal D.O2019-01
Variation Aware Timing Models of CMOS CircuitsLomash AcharyaO2019-01
NCFET Device-Circuit InteractionAmit BaheraO2019-01
Near Threshold CMOS Digital Circuit Design and AnalysisInder ChaudharyO2014-01
Low Voltage CMOS VCO DesignLalit DaniO2015-01
Mechanical Stress Aware Nanoscale VLSI Circuit Design MethodologiesArvind SharmaO2013-01
FinFET device-circuit interaction in low-voltage domainSarita YadavO2016-01
Radiation hard data convertersAshutosh YadavO2019-01
Modeling of FinFET device parasiticsArchana PandeyO2012-01
TunnelFET device-circuit co-designMenakaO2010-01
Device-circuit co-design of Silicon Nanowire transistorSatish MaheshwaramO2010-01
Performance models for nanoscale VLSI circuitsBaljit KaurO2010-01
Robust circuit design methodology for nanoscale VLSI technologiesNaushad AlamO2009-01
Participation in short term courses
Couse NameSponsored ByDate
Design Issues in Nanoscale VLSI Circuits and SystemsQIP2010-01
Special Lectures Delivered
TitlePlaceDate
FinFET Logic Gate Capacitances: Impact of Circuit Level ParametersIEEE Indicon 2013, IIT Bombay2020-08
FinFET Device Circuit Co-Design: Issues and ChallengesIEEE VLSI Design Conference 2015, Bangalore2020-08
Nanoscale VLSI Circuit Design: Timing Issues and SolutionsNITTTR, Chandigarh2020-08
National International Collaboration
TopicOrganisation
In memory computation with SRAMSemiconductor Research Corporation (mainly NXP Semiconductors and Texas Instruments)
Process variation aware Standard Cell extractionFreescale Semiconductor India Pvt. Ltd.
Temporal variation aware circuit design and standard cell characterizationSemiconductor Research Corporation (mainly Texas Instruments)
Tunnel FET Device ModelingST Microelectronics
CMOS VCO DesignST Microelectronics
High Speed CircuitsGlobal Foundries
Fault simulations for ADCsTexas Instruments
SRAM Yield AnalysisARM NOIDA
Particulars of course - I give letters of recommendation to only the following: 1. My BTP or M.Tech dissertation students. 2. Students who did a project with me: Only PhD or MS leading to PhD applications. 3. Students who secured at least a 9 (B+) in my course(s): Only PhD or MS leading to PhD applications.
Refereed Journal Papers

 

Selected Publications in International Journals:

 

  1. Lalit M Dani, Neeraj Mishra and Bulusu Anand, "An Efficient and Accurate Variation-Aware Design Methodology for Near-threshold MOS-Varactor based VCO Architectures," Accepted for publication in IEEE Transactions on CAD.
  2. Neeraj Mishra, Lalit M Dani, Kunal Sanvaniya, S. Dasgupta, S.Chakraborty and Anand Bulusu, "Design and Realization of High-Speed Low-Noise Multi-loop Skew-based ROs Optimized for Even/Odd Multi-Phase Signals," Accepted for publication in IEEE Transactons on Circuits and Systems II: Express Briefs.
  3. Chaudhry I. Kumar and Bulusu Anand, "A Highly Reliable and Energy Efficient Radiation Hardened 12T SRAM Cell Design, Accepted for pubilcation in IEEE Transactions on Device and Material Reliability.
  4. Lalit Dani, N. Mishra, A. Sharma, Bulusu Anand, “Variation Aware Prediction of Circuit Performance in Near-threshold Regime using Supply Independent Transition Threshold Points,” Accepted for publication in IEEE Transactions on Electron Devices.
  5. C. I. Kumar and B. Anand, "A Highly Reliable and Energy Efficient Triple-Node-Upset Tolerant Latch Design", Accepted for publication in IEEE Transactions on Nuclear Science.
  6. Abhishek Acharya, A. B. Solanki, S. Glass, Q. T. Zhao, and Bulusu Anand, "Impact of Gate-Source Overlap on the Device/ Circuit Analog Performance of Line TFETs," Accepted for publication in IEEE TED.
  7. Shashank Banchhor, Kintada Dinesh Kumar, Ashish Dwivedi and Bulusu Anand, “A New Aspect of Saturation Phenomenon in FinFETs and Its Implication on Analog Circuits,” Accepted for publication in IEEE TED.
  8. Chaudhry Indra Kumar, Ishant Bhatia, Arvind Kumar Sharma, Deep Sehgal,H.S. Jatana, and Anand Bulusu, "A Physics based Variability Aware Methodology to Estimate Critical Charge for Near-Threshold Voltage Latches," Accepted for publication in IEEE Transactions on VLSI.
  9. Chaudhry Indra Kumar and Bulusu Anand, "High Performance Energy Efficient Radiation Hardened Latch for Low Voltage Applications,” Elsevier VLSI Journal of Integration, Accepted for publication.
  10. Chaudhry Indra Kumar, Arvind K. Sharma, Rajendra Partap, Anand Bulusu, “An energy-efficient variation aware self-correcting latch,” Elsevier Microelectronics Journal, pp. 67 – 78, February 2019.
  11. Chaudhry Indra Kumar and Bulusu Anand, “Design of highly reliable energy-efficient SEU tolerant 10T SRAM cell,” IET Electronics Letters, pp. 1423 – 1424, December 2018.
  12. Arvind Sharma, Naushad Alam and Anand Bulusu, “Effective Drive Current for Near-Threshold CMOS Circuits’ Performance Evaluation: Modeling to Circuit Design Techniques,” IEEE Transactions on Electron Devices, pp. 2413 – 2421, June 2018.
  13. Abhishek Acharya, Abhishek Solanki, Sudeb Dasgupta and Bulusu Anand, “Drain Current Saturation in Line Tunneling-Based TFETs: An Analog Design Perspective,” IEEE Transactions on Electron Devices, Volume: 65, Issue: 1, Jan. 2018.
  14. Om Prakash , Satish Maheshwaram,Mohit Sharma  Anand Bulusu , Sanjeev K. Manhas, “Performance and Variability Analysis of SiNW 6T-SRAM Cell using Compact Model with Parasitics,” IEEE Transactions on Nanotechnology , Volume: 16, Issue: 6, Nov. 2017.
  15. Om Prakash, Swen Beniwal, Satish Maheshwaram, Anand Bulusu, Navab Singh, and S. K. Manhas, “Compact NBTI reliability modeling in Si nanowire MOSFETs and effect in circuits,” IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 17, NO. 2, JUNE 2017.
  16. Arvind Sharma, Naushad Alam and Anand Bulusu, “Effective Current Model for Inverter-Transmission Gate Structure and Its Application in Circuit Design,” IEEE Transactions on Electron Devices, 2017.
  17. Abhishek Acharya, Sudeb Dasgupta and Bulusu Anand, “A Novel VDSAT Extraction Method for Tunnel FETs and Its Implication on Analog Design,” IEEE Transactions on Electron Devices, pp. 629-623, February 2017.
  18. Arvind Sharma, Naushad Alam, Sudeb Dasgupta, Bulusu Anand, “Multifinger MOSFETs’ Optimization Considering Stress and INWE in Static CMOS Circuits”, IEEE Transactions on Electron Devices, PP, no. 99, 2016. 
  19.  Baljit Kaur, Arvind Sharma, Naushad Alam, Sanjeev K. Manhas, Bulusu Anand, “A Variation Aware Timing Model for a 2-Input NAND Gate and Its Use in Sub-65nm CMOS Standard Cell Characterization”, Microelectronics Journal (Elsevier), vol. 53, pp. 45-55, 2016.
  20. Archana Pandey; Harsh Kumar; S. K. Manhas; Sudeb Dasgupta; Bulusu Anand , “Atypical Voltage Transitions in FinFET Multistage Circuits: Origin and significance” , IEEE Transactions on Electron Devices, pp. 1392-1396, march 2016.
  21. Baljit Kaur, Naushad Alam, S. K. Manhas, Bulusu Anand, “Efficient ECSM characterization considering voltage, temperature and mechanical stress variability,” Accepted for publication in IEEE Transactions on Circuits and Systems – I, October 2014.
  22. Gaurav Kaushal, S. K. Manhas, S. Maheshwaram, S. Dasgupta, B. Anand, and N. Singh, “Novel Design Methodology Using Lext Sizing in Nanowire CMOS Logic” IEEE Transactions on Nanotechnology, pp. 650-658, July 2014.
  23.  Naushad Alam, Bulusu Anand and Sudeb Dasgupta, “An Analytical Delay Model for Mechanical  Stress Induced Systematic Variability  Analysis in Nanoscale Circuit Design,”   IEEE Transactions on Circuits and Systems -I, pp. 1714-1726, June 2014.
  24. Archana Pandey, Swati Raycha, Satish Maheshwaram, S. K. Manhas, S. Dasgupta,  Bulusu Anand, “Effect of Load Capacitance and Input Transition Time on Underlap FinFET Capacitance,” IEEE Transactions on Electron Devices, pp. 30-36, January 2014.
  25. Ashwani Kumar, Vishvendra Kumar, Bulusu Anand, S. Manhas, “Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance,” IEEE Transactions on Nanotechnology, pp. 16-22, January 2014.
  26. Menka, Bulusu Anand and Dasgupta S., “Two Dimensional Analytical Modeling for Asymmetric 3T and 4T Double Gate Tunnel FET in Subthreshold Region: Potential and Electric Field”,  Elsevier Microelectronics Journal, pp. 1251-1259, December 2013.
  27. S. Maheshwaram, S. K. Manhas, G. Kaushal, B. Anand and N. Singh, “Vertical Nanowire CMOS Parasitic Modeling and its Performance Analysis,” IEEE Transactions on Electron Devices, vol. 60, no. 9, pp. 2943-2950, September 2013.
  28. N. Alam, B. Anand, and S. Dasgupta, “The Impact of Process-Induced Mechanical Stress in Narrow Width Devices and Variable Taper CMOS Buffer Design", Elsevier Microelectronics Reliability, vol. 53, Issue 5, pp. 718-724, May 2013.
  29. N. Alam, B. Anand, and S. Dasgupta, “The Impact of Process-Induced Mechanical Stress on CMOS Buffer Design using Multi-Fingered Devices", Elsevier Microelectronics Reliability, vol. 53, Issue 3, pp. 379-385, March 2013.
  30. N. Alam, B. Anand, and S. Dasgupta, "Gate-Pitch Optimization for Circuit Design using Strain-Engineered Multi-Finger Gate Structures", IEEE Transactions on Electron Devices, vol. 59, no. 11, pp. 3120-3123, November 2012.
  31. Gaurav Kaushal, S. Manhas, S. Maheshwaram, S. Dasgupta, A. Bulusu and N. Singh, “Tuning source/drain extension profile in current matching in nanowire CMOS logic,” IEEE Transactions in Nanotechnology, vol. 11, no. 5, pp. 1033-1035, September 2012.
  32. Satish Maheshwaram, S. K. Manhas, G. Kaushal, B. Anand and N. Singh, "Device Circuit Co-Design Issues in Vertical Nanowire CMOS Platform,"  IEEE Electron Device Lettersvol.33, no. 7, pp.934-936, July 2012.
  33. Satish Maheshwaram, S. K. Manhas, Gaurav Kaushal, Bulusu Anand, and Navab Singh, “Vertical Silicon Nanowire Gate-All-Around Field Effect Transistor Based Nanoscale CMOS,” IEEE Electron Device Letters, pp. 1011-1013, August 2011.
  34. Pradeep Kumar Chawda, B. Anand, V. Ramgopal Rao, “Optimum Body Bias constraints for leakage reduction in high-K Complementary Metal Oxide Semiconductor Circuits,” Japanese Journal of Applied Physics (JJAP), May 2009.
  35. Bulusu Anand, M. P. Desai, and V. Ramgopal Rao, "Silicon Film Thickness Optimization for SOI-DTMOS from Circuit Performance considerations", IEEE Electron Device Letters, pp. 436-438, June 2004.
  36. P. Sivaram, B. Anand, M. P. Desai, “Silicon film thickness considerations for SOI-DTMOS,” IEEE Electron Device Letters, pp. 276-278, May 2002.

Selected Publications in International Conferences:

  1. Lalit M. Dani, Neeraj Mishra and Anand Bulusu, “MOS Varactor RO architectures in Near Threshold Regime using Forward Body Biasing techniques,” VLSI Design Conference, January 2019, Delhi.
  2. Lalit M. Dani, N. Mishra, S.K. Banchhor, S. Miryala, A. Doneria, Bulusu Anand, “Design and Characterization of Bulk Driven MOS Varactor Based VCO at Near Threshold Regime,” IEEE-S3S, San Francisco, October 2018.
  3. R. Chawla, S. Yadav, A. Sharma, B. Kaur, R. Pratap and Bulusu Anand, “TSV Induced Stress Model and Its Application in Delay Estimation,” IEEE-S3S, San Francisco, October 2018.
  4. C. Inder Kumar and Bulusu Anand “Design and Analysis of Energy-Efficient Self-Correcting Latches Considering Metastability,” IEEE PRIME, July 2018, Prague.
  5. A. Sharma, N. Alam, A. Bulusu, “UTBB FD-SOI Circuit Design using Multifinger Transistors: A Circuit-Device Interaction Perspective,” IEEE PRIME, July 2018, Prague.
  6. Archana Pandey, Pitul Garg, Shobhit Tyagi, Rajeev Ranjan, Anand Bulusu, “A Modified Method of Logical Effort for FinFET Circuits considering of Fin-Extension Efforts,”  Proceedings of IEEE ISQED-2018, Santa Clara.
  7. Abhishek Acharya, Sudeb Dasgupta and Bulusu Anand, "Impact of Device Design Parameters on VDSAT and Analog Performance of TFETs," Presented at IEEE Silicon Nanoelectronics Workshop 2017, Japan.
  8. Chaudhry Indra Kumar, A. Sharma, S. Miryala, Bulusu Anand, "A novel energy-efficient self-correcting methodology employing INWE," IEEE SMACD, 2016, Lisbon.
  9. Sayyaparaju Sagar Varma, A. Sharma, Bulusu Anand, "An efficient methodology to characterize the TSPC flip flop setup time for static timing analysis," IEEE SMACD, 2016, Lisbon.
  10. Archana Pandey, Harsh Kumar, Praanshu Goyal, S. K. Manhas, Sudeb Dasgupta, Bulusu Anand “FinFET Device Circuit Co-design Issues: Impact of Circuit Parameters on Delay” , IEEE VLSI Design, 2016, Kolkata.
  11. Arvind Sharma, Neeraj Mishra, Naushad Alam, Sudeb Dasgupta, and Bulusu Anand, "Pre-layout Estimation of Performance and Design of Basic Analog Circuits in Stress Enabled Technologies" in IEEE VDAT, 2015.
  12. Yogesh Chaurasiya, Surabhi Bhargava, Arvind Sharma, Baljit Kaur, and Bulusu Anand, "Timing Model for Two Stage Buffer and Its Application in ECSM Characterization", in IEEE VDAT, 2015.
  13.  A. Sharma, Y. Sharma, S. Dasgupta, and B. Anand, “Efficient Static D-Latch Standard Cell Characterization Using a Novel Setup Time Model”, IEEE ISQED-2015.
  14. Parmanand Singh,V. Asthana, R. Sithanandam, A. Bulusu, S. Dasgupta, “Analytical Modeling of Sub-onset Current of Tunnel Field Effect Transistor,” IEEE VLSI Design, 2014.
  15. Bijay Kumar Dalai, A. Bulusu, N. Kannan and Arvind Kumar Sharma, "An Empirical Delta Delay Model for Highly Scaled CMOS Inverter Considering Well Proximity Effect," VDAT 2014.
  16. Saurabh K. Nema, M. SaiKiran, P. Singh, Archana Pandey, S. K. Manhas, A. K. Saxena, Anand Bulusu, “Improved Underlap FinFET with Asymmetric Spacer Permittivities,” Accepted in IWPSD 2013.
  17. S. Maheshwaram, S.K. Manhas, G. Kaushal, and B. Anand, “Vertical Nanowire MOSFET Parasitic Resistance Modeling,” in Proc. IEEE EDSSC 2013, Hong Kong.
  18. Menka, Bulusu Anand and Dasgupta S., “A TCAD approach to evaluate channel electrondensity of double gate symmetric n-tunnel FET”, INDICON 2012, pp:577-581.
  19. Baljit Kaur, S. Miryala, S. K. Manhas and Bulusu Anand, “An Efficient Method for ECSM Characterization of CMOS Inverter in Nanometer Range Technologies,” Accepted in IEEE International Symposium on Quality Electronic Design (ISQED) 2013.
  20. Archana Pandey, Swati Raycha, Satish Maheshwaram, S. K. Manhas, S. Dasgupta, Bulusu Anand, “Underlap FinFET Capacitance: Impact of Input Transition Time and Output Load” IEEE International Nanoelectronics Conference (INEC) 2013.
  21. N. Alam, B. Anand, and S. Dasgupta, “Process induced mechanical stress aware poly-pitch optimization for enhanced circuit performance”, in IEEE ISQED, 2012, pp. 717-720.
  22. N. Alam, B. Anand, and S. Dasgupta, “Impact of Dummy Poly on the Process-Induced Mechanical Stress Enhanced Circuit Performance", in VDAT 2012, pp. 357-359.
  23. N. Alam, S. Dasgupta, and B. Anand “Impact of process-induced mechanical stress on multi-fingered device performance”, in Proc. IWPSD, 2011.
  24. Arnab Kumar Biswas, Anand Bulusu and Sudeb Dasgupta, “A Proposed Output Buffer at 90 nm Technology with Minimum Signal Switching Noise at 83.3MHz,” Proceedings of IEEE ISVLSI 2011.
  25. Sandeep Miryala, Baljit Kaur, Bulusu Anand and  Sanjeev Manhas, "Efficient Nanoscale VLSI Standard Cell Library Characterization Using a Novel Delay Model," Proceedings of IEEE ISQED 2011.
  26. Saurabh Nema, Mayank Srivastava, Angada B. Sachid, A. K. Saxena, Anand Bulusu, "A Novel Scaling Strategy for Underlap FinFETs," ICCCD 2010, IIT Kharagpur.
  27. Bulusu Anand, V. Ramgopal Rao and M. P. Desai, "Circuit Performance Improvement Using PDSOI-DTMOS Devices with a Novel Optimal Sizing Scheme Considering Body Parasitics,” Accepted in VLSI-DAT, 2007.
  28. Pradeep Kumar Chawda, B. Anand, and V.Ramgopal Rao, "Effectiveness of Optimum Body Bias for Leakage Reduction in High K CMOS Circuits", Proceedings of 35th International Conference on Solid State Devices and Materials (SSDM 2004), pp. 434-435, Tokyo, Japan, September 15-17, 2004.
  29. Sushant Suryagandh, B. Anand, M. P. Desai and V. Ramgopal Rao, “Dynamic Threshold Voltage CMOS (DTMOS) for Future Low Power Sub-1V Applications," Proceedings of 10th International Workshop on Physics of Semiconductor Devices (IWPSD), pp. 655-658, December 1999, New Delhi.

IP:

  1. Bulusu Anand, Shivananda Reddy, Surya Veeraraghavan, “A Method to Find Sensitivity of Standard Cells to Process/Model Changes,” Defensive Publication of Freescale Semiconductor Inc., June 2008, http://www.priorartdatabase.com/IPCOM/000172383/
  2. S. K. Manhas, S. Nema, A. Bulusu, “A method of fabricating dual/asymmetric dielectric constant (dual-K) spacers in MOSFET,” application no. CINIITR000100017, 2012 (Provisional Indian Patent).
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