1. J. Wang, W. Cai, W. Lu, S. Lu, E. Kano, V. Agulto, B. Sarkar, H. Watanabe, N. Ikarashi, T. Iwamoto, M. Nakajima, Y. Honda, H. Amano, “Observation of 2D-magnesium-intercalated gallium nitride superlattices,” Nature 631, 67, 2024.

2. H. Cao, M. Nong, J. Li, X. Tang, T. Liu, Z. Liu, B. Sarkar, Z. Lai, Y. Wu and X. Li, “Low contact resistivity at the 10^-4 Ω.cm² level fabricated directly on n-type AlN,” Applied Physics Letters 125, 081602, 2024.

3. J. M. T. Vasquez, A. Mukherjee, S. Singh, V. Khandelwal, S. Yuvaraja, G. Garcia, M. Rajbhar, X. Li and B. Sarkar, “Field management in NiO_x/β-Ga₂O₃ merged-PIN Schottky diodes: simulation studies and experimental validation,” Journal of Physics D: Applied Physics 57, 445105, 2024.

4. B. Sarkar, J. Wang, H. Watanabe and H. Amano, “Improving the Barrier Height of N-polar GaN Schottky Diodes Using Mg-Diffusion Process,” IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1416-1420, 2024.

5. J. Patel, T. Pramanik and B. Sarkar, " Analytical Model of Center Potential in GaN Vertical Junctionless Power Fin-MOSFETs for Fast Device-Design Optimization," IEEE Transactions on Electron Devices, vol. 71, no. 1, pp. 99-106, 2024.

6. Z. Yu, Y. Dai, K. Tang, T. Luo, S. Qi, S. Singh, L. Huang, J. Ye, B. Sarkar and W. Guo, “Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer,” Electronics 13, 1679, 2024.

7. A. Ashai, A. Jadhav, A. Behera, S. Roy, A. Dasgupta and B. Sarkar, “Deep Learning Based Fast BSIM-CMG Parameter Extraction for General Input Dataset,” IEEE Transactions on Electron Devices, vol. 70, no. 7, pp. 3437-3441, 2023.

8. B. Sarkar, J. Wang, O. Badami, T. Pramanik, W. Kwon, H. Watanabe and H. Amano, “Ga-polar GaN Camel Diode Enabled by a Low-cost Mg-Diffusion Process” Applied Physics Express 16, 121002, 2023.

9. C. Wang, X. Xu, S. Tyagi, P.C. Rout, U. Schwingenschlögl, B. Sarkar, V. Khandelwal, X. Liu, L. Gao, M.N. Hedhili, H.N. Alshareef and X. Li, “Ti₃C₂T_X MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors,” Advanced Materials 35, 2211738, 2023.

10. J. M. T. Vasquez, A. Ashai, Y. Lu, V. Khandelwal, M. Rajbhar, M. Kumar, X. Li and B. Sarkar, “A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga₂O₃ heterojunction,” Journal of Physics D: Applied Physics 56, 065104, 2023.

11. H. Pal, S. Singh, C. Guo, W. Guo, O. Badami, T. Pramanik and B. Sarkar, “Lateral P-N junction Photodiodes using Lateral Polarity Structure GaN Films: A Theoretical Perspective,” Journal of Electronic Materials 52, 2148, 2023.

12. V. Khandelwal, M. Rajbhar, G. Garcia, X. Tang, B. Sarkar and X. Li, “Demonstration of β-Ga₂O₃ Nonvolatile Flash Memory for Oxide Electronics,” Japanese Journal of Applied Physics 62, 060902, 2023.

13. A. Mukherjee, J. M. T. Vasquez, A. Ashai, S. Yuvaraja, M. Rajbhar, B. Sarkar and X. Li, “On Band-to-Band Tunneling and Field Management in NiOx/β-Ga₂O₃ PN and PiN Diodes,” Journal of Physics D: Applied Physics 56, 475104, 2023.

14. C. Guo, J. Zhang, S. Xia, L. Deng, K. Liu, Z. Yang, B. Cheng, B. Sarkar, W. Guo and J. Ye, “Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation,” Optics Letters 48, 4769, 2023. 

15. S. Mukhopadhyay, L. Lyle, H. Pal, K. Das, L. Porter and B. Sarkar, “Evidence of thermionic emission in forward biased β-Ga₂O₃ Schottky diodes at Boltzmann doping limit,” Journal of Applied Physics 131, 025702, 2022.

16. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy and B. Sarkar, “An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources” IEEE Journal of the Electron Device Society, vol. 10, pp. 797-807, 2022.

17. A. Jadhav, P. Bagheri, A. Klump, D. Khachariya, S. Mita, P. Reddy, S. Rathkanthiwar, R. Kirste, R. Collazo, Z. Sitar, and B. Sarkar, “On Electrical Analysis of Al-rich p-AlGaN films for III-nitride UV light emitters,” Semiconductor Science and Technology 37, 015003, 2022.

18. P. Bagheri, A. Klump, S. Washiyama, M. Breckenridge, J. Kim, Y. Guan, D. Khachariya, C. Quinones-Garcia, B. Sarkar, S. Rathkanthiwar, P. Reddy, S. Mita, R. Kirste, R. Collazo and Zlatko Sitar. “Doping and compensation in heavily Mg doped Al-rich AlGaN,” Applied Physics Letters 120, 082102, 2022.

19. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy and B. Sarkar, “Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs using Rational Functions” IEEE Transactions on Electron Devices, vol. 68 no. 12, pp. 6059-6064, 2021.

20. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, Y. Honda, S. Roy, H. Amano and B. Sarkar, “Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs,” IEEE Journal of the Electron Device Society, vol. 9, pp. 570-581, 2021.

21. A. Jadhav, Y. Dai, P. Upadhyay, W. Guo and B. Sarkar, “Role of Interface Induced Gap States in Polar Al_xGa_1−xN (0 ≤ x ≤ 1) Schottky Diodes,” Journal of Electronic Materials 50, 3731, 2021.

22. A. Jadhav, L. A. M. Lyle, Z. Xu, K. K. Das, L. M. Porter and B. Sarkar, “Temperature Dependence of Barrier Height Inhomogeneity in β-Ga₂O₃ Schottky Barrier Diodes,” Journal of Vacuum Science and Technology B 39, 040601, 2021.

23. S. Mukhopadhyay, H. Pal, S. R. Narang, C. Guo, J. Ye, W. Guo and B. Sarkar, “Self-powered ultraviolet photodiode based on lateral polarity structure GaN films” Journal of Vacuum Science and Technology B 39, 052206, 2021.

24. M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste, S. Mita, P. Reddy, R. Collazo and Z. Sitar, “High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN,” Applied Physics Letters 118, 112104, 2021.

25. R. Kirste; B. Sarkar; P. Reddy; Q. Guo; R. Collazo and Z. Sitar, “Status of the Growth and Fabrication of AlGaN based UV laser diodes for near and mid UV wavelength,” Journal of Materials Research 36, 4638, 2021.

26. B. Sarkar and R. Collazo, “Ch.7 - Doping of AlGaN” in H. Amano, et. al. “The 2020 UV Emitter Roadmap” Journal of Physics D: Applied Physics 50, 503001, 2020.

27. H. Xu, J. Jiang, Y. Dai, M. Cui, K. Li, X. Ge, J. Hoo, L. Yan, S. Guo, J. Ning, H. Sun, B. Sarkar, W. Guo and J. Ye, “Polarity Control and Nanoscale Optical Characterization of AlGaN-based Multiple Quantum Wells for Ultraviolet C emitters,” ACS Applied Nano Materials 3, 5335. 2020.

28. P. Bagheri, R. Kirste, P. Reddy, S. Washiyama, S. Mita, B. Sarkar, R. Collazo, and Z. Sitar, “The nature of the DX state in Ge-doped AlGaN,” Applied Physics Letters 116, 222102, 2020.

29. M. H. Breckenridge, Q. Guo, A. Klump, B. Sarkar, Y. Guan, J. Tweedie, R. Kirste, S. Mita, P. Reddy, R. Collazo and Z. Sitar, “Shallow Si donor in ion-implanted homoepitaxial AlN,” Applied Physics Letters 116, 172103, 2020.

30. P. Reddy, D. Khachariya, D. Szymanski, M. H. Breckenridge, B. Sarkar, S. Pavlidis, R. Collazo, Z. Sitar and E. Kohn, “Role of polarity in SiN on Al/GaN and the pathway to stable contacts,” Semiconductor Science and Technology 35, 055007, 2020.

31. A. Ray, S. Bordoloi, B. Sarkar, P. Agarwal and G. Trivedi, “Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMT,” Journal of Electronic Materials 49, 2018, 2020.

32. S. Washiyama, P. Reddy, B. Sarkar, M. H. Breckenridge, Q. Guo, P. Bagheri, A. Klump, R. Kirste, J. Tweedie, S. Mita, Z. Sitar and R. Collazo, “The role of chemical potential in compensation control in Si: AlGaN,” Journal of Applied Physics 127, 105702, 2020.

33. B. Sarkar, P. Reddy, A. Klump, F. Kaess, R. Rounds, R. Kirste, S. Mita, E. Kohn, R. Collazo and Z. Sitar, “On Ni/Au alloyed contacts to Mg-doped GaN,” Journal of Electronic Materials 47, 305, 2018.

34. B. Sarkar, S. Mills, B. Lee, W. S. Pitts, V. Misra and P. D. Franzon, “On Using the Volatile Mem-capacitive Effect of TiO₂ RRAM to Mimic the Synaptic Forgetting Process,” Journal of Electronic Materials 47, 994, 2018.

35. B. Sarkar, S. Washiyama, M. H. Breckenridge, A. Klump, J. N. Baker, P. Reddy, J. Tweedie, S. Mita, R. Kirste, D. L. Irving, R. Collazo and Z Sitar, "(Invited) N- and P- type Doping in Al-rich AlGaN and AlN," ECS Transactions, vol. 86, no. 12, pp. 25-30, 2018.

36. R. Rounds, B. Sarkar, T. Sochacki, M. Bockowski, M. Imanishi, Y. Mori, R. Kirste, R. Collazo and Z. Sitar, “Thermal Conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes,” Journal of Applied Physics 124, 105106, 2018.

37. R. Rounds, B. Sarkar, D. Alden, Q. Guo, A. Klump, C. Hartmann,T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar and R. Collazo, “The influence of point defects on the thermal conductivity of AlN crystals,” Journal of Applied Physics 123, 185107, 2018.

38. R. Kirste, Q. Guo, J. H. Dycus, A. Franke, S. Mita, B. Sarkar, P. Reddy, J. M. LeBeau, R. Collazo and Z. Sitar, "6 kW/cm² UVC laser threshold in optically pumped lasers by controlling point defect formation," Applied Physics Express 11, 082101, 2018.

39. I. Bryan, Z. Bryan, S. Washiyama, P. Reddy, B. E. Gaddy, B. Sarkar, M. H. Breckenridge, Q. Guo, M. Bobea, J. Tweedie, S. Mita, D. L. Irving, R. Collazo and Z. Sitar, “Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD,” Applied Physics Letters 112, 062102, 2018.

40. R. Rounds, B. Sarkar, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar and R. Collazo, “The thermal conductivity of single crystalline AlN,” Applied Physics Express 11, 071101, 2018.

41. P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama, F. Kaess, M. H. Breckenridge, B. Sarkar, B. Haidet, A. Franke, E. Kohn, R, Collazo and Z. Sitar, “Plasma Enhanced Chemical Vapor Deposition of SiO₂ and SiN_X on AlGaN: Band offsets and interface states as a function of Al composition,” Journal of Vacuum Science and Technology A 36, 061101, 2018.

42. B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan, R. Kirste, E. Kohn, R. Collazo and Z. Sitar, “High free carrier concentration in p-GaN grown on AlN substrates,” Applied Physics Letters 111, 032109, 2017.

43. B. Sarkar, B. B. Haidet, P. Reddy, R. Kirste, R. Collazo and Z. Sitar, “Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate by reactive ion etching surface treatment,” Applied Physics Express 10, 071001, 2017.

44. B. Sarkar, P. Reddy, F. Kaess, B. B. Haidet, J. Tweedie, S. Mita, R. Kirste, E. Kohn, R. Collazo and Z. Sitar, “(Invited) Material considerations for the development of III-nitride power devices,” ECS Transactions, vol. 80, no. 7, pp. 29-36, 2017.

45. B. B. Haidet, B. Sarkar, P. Reddy, I. Bryan, Z. Bryan, R. Kirste, R. Collazo and Z. Sitar, “Nonlinear analysis of Vanadium- and Titanium-based contacts to Al-rich n-AlGaN,” Japanese Journal of Applied Physics 56, 100302, 2017.

46. P. Reddy, B. Sarkar, F. Kaess, M. Gerhold, E. Kohn, R. Collazo and Z. Sitar, “Defect-free Ni/GaN Schottky barrier behavior with high temperature stability,” Applied Physics Letters, 110 011603, 2017.

47. P. Reddy, S. Washiyama, F. Kaess, M. H. Breckenridge, L. H. Hernandez-Balderrama, B. B. Haidet, D. Alden, A. Franke, B. Sarkar, E. Kohn, R. Collazo and Z. Sitar, “High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: band offset and passivation studies,” Journal of Applied Physics 119, 145702, 2016.

48. B. Sarkar, B. Lee and V. Misra, “Understanding the gradual reset in Pt/Al₂O₃/Ni RRAM for synaptic applications,” Semiconductor Science and Technology 30, 105014, 2015.

49. B. Sarkar, N. Ramanan, S. Jayanti, N. D. Spigna, B. Lee, P. Franzon and V. Misra, “Dual floating gate unified MOSFET with simultaneous volatile and non-volatile operation,” IEEE Electron Device Letters, vol.35, no.1, pp.48-50, 2014.

50. B. Sarkar, B. Lee, and V. Misra, "Implications of lower zero-field activation energy of dielectric in Al₂O₃/HfO₂ bi-layer dielectric RRAM forming process," ECS Transactions, vol. 64. pp. 43-48, 2014.

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