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Arup Samanta
Arup Samanta Assistant Professor arupsfph[at]iitr.ac.in 91-01332-286678
Areas of Interest
  • Nano-electronics:, Single Electron Transistors, Dopant Atom Transistors, Quantum Computing, Single Electron Metrology
  • Silicon Photovoltaics:, SiNW- and Quantum Dots-based Solar Cells
  • First-principles simulation: , Investigation of electronic states and carrier transport in Nano-electronic Devices
Professional Background
FromToDesignationOrganisation
2016PresentAssistant ProfessorIndian Institute of Technology Roorkee
20122016Postdoctoral Research AssociateResearch Institute of Electronics, Shizuoka University, Japan
March,2010May,2010Visiting ResearcherNational Taiwan University, Taipei, Taiwan
Honors and Awards
AwardInstituteYear
Best Presentation award 17th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan)2015
Young Physicist Award 29th Young Physicist Colloquium, Indian Physical Society, SINP, Kolkata)2011
Best poster award 54th DAE solid state physics symposium, Bododara2009
National Eligibility Test (NET), CSIR- Junior Research Fellowship CSIR2006
National Eligibility Test (NET) for lectureship UGC2005
Educational Details
DegreeSubjectUniversityYear
Ph.D.Silicon NanotechnologyIndian Association for the Cultivation of Science2012
M.Sc.PhysicsUniversity of Calcutta2005
2003Physics (Honours)University of Calcutta2003
Administrative Background
FromToDesignationOrganisationLevel
2017PresentOCCMP and M.Tech Laboratory
Sponsored Research Projects
TopicFunding AgencyYear
Silicon nanowire based radial p-n junction solar cells with high and stable efficiency at low-costDST2017
Synthesis of Silicon Nanowire Based Solar Cells by Wet Chemical MethodsIITR-SRIC2017
Memberships
  • The Japan Society of Applied Physics, Regular
Research Scholar Groups
Scholar NameInterest
Miss. Alka (Ph.D. student, 1st year) Silicon Nanowire based Solar Cells
Mr. Ravi Kumar Verma (M.tech student, 1st year)Silicon Nanowire based Solar Cells
Mr. Ritesh Uraon (Int. M.Sc student)Single Electron Transistor
Invitations
TopicOrganistaionCategoryYear
Dopant atom as an active element in transistors: present status and future prospect Emerging Trends in Computing, Communication and Control (ICETC32017); Durgapur, WBI2017
Dopant Atom Electronics IIT Delhi G2016
Single-Electron Tunneling Operation via Single- and Few-Dopant Quantum Dots in SOI-FETs National Physical Laboratory, DelhiG2016
Interaction between Dopant Atoms and Interface in Nanoscale Transistors 3rd International Conference on Nanoscience and Nanotechnology (ICONN-2015); SRM University, ChennaiI2015
Atomic and Molecular Electronics in Si nano-transistors: Single Electron Effects to Qubit Operations Indian Association for the Cultivation of ScienceG2015
Courses or Conferences Organised
Conference NameSponsored ByDate
Familiarization Workshop on Nanofabrication TechnologiesINUP, IISc Bangalore27-28,4,17
National International Collaboration
TopicOrganisationLevel
Dopant-atom-based nanoelectronics devices Research Institute of Electronics, Shizuoka University, JapanRP
Books Authored

1.    Recent Global Research and Education: Technological Challenges (Volume 519 of the series   Advances in Intelligent Systems and Computing, 2016)

            Chapter: Toward Room Temperature Operation of Dopant Atom Transistors

                             Michiharu Tabe , Arup Samanta, Daniel Moraru, pp. 83-88.

 

Refereed Journal Papers

Refereed Journal Papers:

  1. Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors Arup Samanta, Manoharan Muruganathan, Masahiro Hori, Yukinori Ono, Hiroshi Mizuta, Michiharu Tabe, and Daniel Moraru; Appl. Phys. Lett. 110, 093107 (2017). Link 

 

  1. Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors

         Arup Samanta, Daniel Moraru, Takeshi Mizuno, and Michiharu Tabe; Scientific Reports 5, 17377 (2015). Link

    3. Physics of strongly-coupled dopant-atoms in nanodevices

         Daniel Moraru, Krzysztof Tyszka, Yuki Takasu, Arup Samanta, Takeshi Mizuno, Ryszard Jablonski and Michiharu Tabe; Int. J. Technol. 6, 1057 (2015). Link

4. Effect of Individual Dopants in Nano-SOI-MOSFETs and Nano-pn-Diodes

          Michiharu Tabe, Daniel Moraru, Arup Samanta, Krzysztof Tyszka, H. N. Tan, Yuki Takasu, Ryszard Jab?o?ski, Le The Anh,             Hiroshi Mizuta, and Takeshi Mizuno; ECS Transactions 69, 189-195 (2015). Link

5. Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nanodevices

           Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Le The Anh, Muruganathan Manoharan, Takeshi Mizuno, Ryszard                        Jablonski, Hiroshi Mizuta, and Michiharu Tabe; Nanoscale Res. Lett. 10 (1), 372 (2015). Link

6. Effect of selective doping on the dispersion of donor-induced quantum dots in Si nanoscale transistors

          Krzysztof Tyszka, Daniel Moraru, Arup Samanta, Takeshi Mizuno, Ryszard Jab?o?ski,  and Michiharu Tabe; Appl. Phys.                 Express 8 (9), 094202 (2015). Link

7. Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy

           Krzysztof Tyszka, Daniel Moraru, Arup Samanta, Takeshi Mizuno, Ryszard Jab?o?ski,  and Michiharu Tabe; J. Appl. Phys.            117 (24), 244307 (2015). Link

8. Tunneling transport in quantum dots formed by coupled dopant atoms

           Daniel Moraru, Arup Samanta, Takahiro Tsutaya, Yuki Takasu, Takeshi Mizuno, and Michiharu Tabe; Adv. Mater. Res. 1117,            78-81 (2015). Link

9. Quantum Size Effects on the Optical Properties of nc-Si QDs Embedded in a-SiOx Matrix Synthesized by Spontaneous Plasma Processing

           Debajyoti Das and Arup Samanta; Phys. Chem. Chem. Phys., 17 (7), 5063-5071 (2015). Link

10. Transport spectroscopy of coupled donors in silicon nano-transistors

           Daniel Moraru, Arup Samanta, Le The Anh, Takeshi Mizuno, Hiroshi Mizuta and Michiharu Tabe; Scientific Reports 4, 6219            (2014). Link

11. Dopant-Atom-Based Tunnel SOI-MOSFETs

          Michiharu Tabe, Moraru Daniel, Earfan Hamid, Arup Samanta, Le The Anh, Takeshi Mizuno and Hiroshi Mizuta; ECS                       Transactions 58 (9), 89-95 (2013). Link

12. SiOx nanowires with intrinsic nC-Si quantum dots: the enhancement of the optical absorption and photoluminescence

          Arup Samanta and Debajyoti Das; J. Mater. Chem. C 1 (40), 6623 (2013). Link

13. Structural investigation of nC-Si/SiOx:H thin films from He diluted (SiH4 + CO2) plasma at low temperature

           Arup Samanta and Debajyoti Das; Applied Surface Science 259, 477– 485 (2012). Link

14. Size Effect on Electron Transport in NC-Si/SiOx Core/Shell Quantum Dots

           Debajyoti Das and Arup Samanta; Materials Research Bulletin 47 (11), 3625–3629 (2012). Link

15. Changes in optical and electrical phenomena correlated to structural configuration in nanocrystalline silicon network

          Arup Samanta and Debajyoti Das; J. Electrochem. Society. 158 (11), H1138 (2011). Link

16. Low Temperature Direct Plasma Synthesis of nC-Si/SiOx Core/Shell Quantum Dots

          Arup Samanta and Debajyoti Das; Physics Teacher 53 (3-4),  25–31 (2011).

17. Effect of RF-Power on the formation and Size evolution of nC-Si Quantum Dots in an amorphous SiOx matrix

          Arup Samanta and Debajyoti Das; J. Mater. Chem., 21 (20), 7452 (2011). Link

18. Photoluminescent silicon quantum dots in core/shell configuration: synthesis by low-temperature and                                  spontaneous plasma processing

         Debajyoti Das and Arup Samanta; Nanotechnology, 22 (5), 055601 (2011). Link

19. Optical, electrical and structural properties of SiO:H films prepared from He dilution to the SiH4 plasma

          Arup Samanta and Debajyoti Das; J. Phys. D: Appl. Phys., 42 (21), 215404 (2009). Link

20. Studies on the structural properties of SiO:H films prepared from (SiH4 + CO2 +He)-plasma in RF-PECVD

         Arup Samanta and Debajyoti Das; Sol. Energy Mater. Sol. Cells   93 (5), 588 (2009). Link

 

 

Papers Presented at Symposia/Conference/Workshop:

  1. Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature

D. Moraru, A. Samanta, T. Hasan, M. Manoharan, H. Mizuta2, and M. Tabe; Proc. 77th JSAP Autumn meeting 2016 (Niigata City, Niigata, Japan, Sept.13-16, 2015) pp. 12-354

  1. Single-Electron Tunneling Operation via A-Few-Donor Quantum Dots in SOI-FETs up to Room Temperature

A. Samanta, Y. Takasu, T. Mizuno, D. Moraru and M. Tabe; Proc. IEEE Silicon Nanoelectronics Workshop (Hawaii, USA, June 12-13, 2016)

  1. Quantum-Tunneling in Dopant-Atom Devices Formed in Ultrathin Si Layers

D. Moraru, A. Samanta, L. T. Anh, M. Manoharan, T. Mizuno, K.Tyszka, R. Jablonski, H. Mizuta and M. Tabe; Proc. EMN Quantum Meeting on Energy Materials Nanotechnology (Phuket, Thailand, April 8-11, 2016)

  1. Tunneling-transport operation of selectively-doped dopant-atom transistors up to room temperature

A. Samanta, D. Moraru, Y. Takasu, T. Mizuno and M. Tabe; Proc. 63rd JSAP spring meeting 2015 (Tokyo Inst. Tech., Ookayama, Japan, March 19-22, 2016) 19p-P4-14

  1. Dynamical modification of the equivalent circuit with the bias voltage in a multiple-dopant system

A. Samanta, D. Moraru, Y. Takasu, T. Mizuno, M.  Tabe; Proc. 17th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan,  Nov. 17-18, 2015) pp. 85-89.

  1. Atomic and Molecular Effects based on Dopants in Silicon Nanodevices
  2. ? Moraru, A. Samanta, K. Tyszka, M. Muruganathan, L. T. Anh, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe, Proc. Inter. Conf. Small Sci. (Phuket, Thailand, Nov 4-7, 2015) pp. 64-65.
  1. Effect of Individual Dopants in Nano-SOI-Mosfets and Nano-Pn-Diodes (Invited)

M. Tabe, D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta and T. Mizuno, Proc. 228th ECS Meeting  (Phoenis, USA, Oct 11-15, 2015) pp. 1093. Link

  1. Impact of Dopant atoms on electron tunneling into nanoscale-transistor channels
  2. ? Moraru, A. Samanta, Y. Takasu, K. Tyszka, T. Mizuno, R. Jablonski, and M. Tabe, Proc. 14th Inter. Conf. Global Res. Education (inter-Academia-2015) (Hamamatsu, Japan, Sept. 28-30, 2014) pp. 226-227.
  1. High-temperature single-electron tunneling transport through dopant-cluster in narrow channel SOI-FETs

A. Samanta, D. Moraru, Y. Takasu, T. Mizuno, M.  Tabe; Proc. 76th JSAP Autumn meeting 2015 (Nagoya, Japan, Sept.15-16, 2015) pp. 12-356. Link

  1. Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski and M. Tabe; Proc. 76th JSAP Autumn meeting 2015 (Nagoya, Japan,  Sept.15-16, 2015) pp. 12-354. Link

  1. Physics of strongly-coupled dopant-atoms in nanodevices (Invited)

D. Moraru, K. Tyszka, Y. Takasu, A. Samanta, T. Mizuno, R. Jablonski and M. Tabe; Proc. 14th Inter. Conf. Quality Res. (QiR)Mataram, Lombok, Indonesia, Aug 10-13, 2015) pp. C12.1

  1. Recent progress in single-dopant atom devices (Invited)

M. Tabe, D. Moraru, A. Samanta, and T. Mizuno; Proc. 14th Inter. Conf. Quality Res. (QiR)Mataram, Lombok, Indonesia, Aug 10-13, 2015) pp. C1.2

  1. Dopant-cluster-assisted tunnelling in Si nanodevices (Invited)

M. Tabe, D. Moraru, A. Samanta, H.N. Tan, L.T. Anh, M. Manoharan, H. Mizuta, and T. Mizuno; Proc. Silicon Quantum Electronics Workshop 2015 (Takamatsu, Japan, Aug 3-4, 2015) pp. 43.

  1. Tunneling transport through single- and clustered-dopants (Invited)

M. Tabe, D. Moraru, A. Samanta, H.N. Tan, L.T. Anh, M. Manoharan, H. Mizuta, and T. Mizuno; Proc. III Bilateral Italy-Japan Seminar (Silicon Nanoelect. Adv. Appl.) (Kyoto, Japan. June 16th, 2015)

  1. Impact of diffused donor-clusters near Lead/Channel Boundary on High-Temperature Single-Electron Tunneling in Narrow SOI-FETs

D. Moraru, A. Samanta, Y. Takasu, K. Tyszka, T. Mizuno, R. Jablonski and M. Tabe; Proc. of IEEE Silicon Nanoelectronics Workshop (Kyoto, Japan, June 13-14, 2015) pp. 31-32. Link

  1. Tunneling via Single and Coupled Dopant Atoms in Si Nanodevices (Invited)

D. Moraru, A. Samanta, K. Tyszka, L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe; Proc. EMN Quantum Meeting on Quantum technology (Bejing, China, April 14-17, 2015) pp. 62

  1. Interactions of individual dopants and macroscopic quantum dots in weakly-doped nanoscale SOI-FETs

D. Moraru, Y. Takasu, A. Samanta, T. Mizuno, and M. Tabe; Proc. 62rd JSAP spring meeting 2015 (Tokai Univ., Japan, March 11-14 2015) pp. 12-151. Link

  1. Electric-field-assisted formation of an interfacial double-donor molecule in Si nano-transistors 

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 62rd JSAP spring meeting 2015 (Tokai Univ., Japan,  March 11-14 2015) pp. 12-154. Link

  1. Interaction between Dopant Atoms and Interface in Nanoscale Transistors (invited)

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 3rd Inter. Conf. Nanosci. Nanotechnol. (ICONN-2015) (SRM Univ., Kattankulathur, Chennai, India, Feb. 04-06, 2015) pp. 38-39.

  1. Tunneling Transport via Dopant-induced Quantum Dots in Silicon Nano-devices (Invited)

D. Moraru, K. Tyszka, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe; Proc. 3rd Inter. Conf. Nanosci. Nanotechnol. (ICONN-2015)(SRM Univ., Kattankulathur, Chennai, India, Feb. 04-06, 2015) pp. 28-29

  1. Interface-Assisted Merging of Two Donor Potential Wells in Ultrathin Si-Transistors

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. Inter. Symp. Toward Fut. Adv. Res. Shizuoka Univ. (Shizuoka Univ., Hamamatsu, Japan, Jan. 27-28, 2015) pp. 46

  1. Atomic and Molecular Behavior in Tunneling Transport via Dopants in Nano-Transistors

D. Moraru, A. Samanta, Y. Takasu, T. Mizuno, and M. Tabe; Proc. Inter. Symp. Toward Fut. Adv. Res. Shizuoka Univ. (Shizuoka Univ., Hamamatsu, Japan, Jan. 27-28, 2015) pp. 47.

  1. Silicon Nanoscale Transisitors with Dopant-Induced Quantum Dots

D. Moraru, K. Tyszka, A. Samanta, Y. Takasu, T. Tsutaya, T. Mizuno, R.Jablonski, and M. Tabe; Proc. 2nd Inter. Conf. Nanoelect. Res. Edu. (Shizuoka Univ., Hamamatsu, Japan, 24-26 Nov., 2014) pp. 55-56.

  1. Single Electron Transport in Double-Donor System at Si/SiO2 Interface in Ultrathin SOI-FETs

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 16th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov. 11-12, 2014) pp. PS1-8-(1-5).

  1. Low-temperature spectroscopy of donor states in silicon nano-channels

D. Moraru, T. Tsutaya, Y. Takasu, A. Samanta, T. Mizuno, and M. Tabe; Proc. 16th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan,  Nov. 11-12, 2014) pp. S78-(1-5).

  1. Impact of doping concentration regimes on low-temperature tunneling in nanoscale SOI-FETs

D. Moraru, T. Tsutaya, Y. Takasu, A. Samanta, L. T. Anh, M. Manoharan, T. Mizuno, H. Mizuta, and M. Tabe; Proc. 75th JSAP Autumn meeting 2014 (Sapporo, Japan, Sept. 2014) pp. 13-191. Link

  1. Effect of Dopants in Tunnel Barriers of Selectively Doped SOI-FETs

A. Samanta, D. Moraru, T. Tsutaya, L. T. Anh, M. Manoharan, T. Mizuno, H. Mizuta, and M. Tabe; Proc. 75th JSAP Autumn meeting 2014 (Sapporo, Japan, Sept. 2014) pp. 13-192. Link

  1. Control of electron transport regimes via single- and multiple-donors in nano-channel SOI-FETs

D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, L. T. Anh, K. Tyszka, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe; Proc. IEEE Silicon Nanoelectronics Workshop (Hawaii, USA, June 9-10, 2014) pp. 53-54. Link

  1. Electron Transport in Double-Donor Systems at Si/SiO2 Interface in SOI-FETs

A. Samanta, D. Moraru, T. Mizuno and M. Tabe; Proc. IEEE Silicon Nanoelectronics Workshop (Hawaii, USA, June 9-10, 2014) pp. 73-74. Link

  1. Tunneling transport in quantum dots formed by coupled dopant atoms

D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, T. Mizuno, and M. Tabe; Proc. 13th Inter. Conf. Global Res. Education (inter-Academia) (Riga, Latvia, Sept. 10-12, 2014) pp. 45-46

  1. Effect of electric field on single-electron tunneling transport in dopant-atom transistors

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 61st JSAP Spring Meeting 2014 (Kanagawa, Japan, March 17-20, 2014) pp. 13-267. Link

  1. Tunneling transport spectroscopy of interacting donors in silicon nano-transistors

D. Moraru, A. Samanta, Y. Takasu, T. Tsutaya, L. T. Anh, T. Mizuno, H. Mizuta and M. Tabe Proc. 61st JSAP Spring Meeting 2014 (Kanagawa, Japan,  March 17-20, 2014) pp. 13-263. Link

  1. Dopant atom devices based on Si nanostructures (Invited)

M. Tabe, D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, and H. Mizuta; Proc. 7th Inter. Work. New Group IV Semi. Nanoelect. JSPS Core-to-Core Prog. Joint Semicon., Atom. Contr. Proc. Ultralarge Scale Integration (Tohoku University, Sendai, Japan, Jan. 27-28, 2014) 

  1. Transport spectroscopy of selectively-doped dopant-based SOI Transistors

A. Samanta, D. Moraru, T. Mizuno1, L. T. Anh, H. Mizuta and M. Tabe; Proc. Interdiscip. Domain Res. in Japan-Europe Part. (Shizuoka, Japan, Nov. 18-19, 2013) pp. 54.

  1. Transport spectroscopy of selectively-doped interacting donors in silicon nano-transistors

D. Moraru, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta and M. Tabe; Proc. 15th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov. 13-14, 2013) pp. PS1-7-(1-5).

  1. Electric field effect on single-dopant-atom in Si FETs

A. Samanta, D. Moraru, T. Mizuno, and M. Tabe; Proc. 15th Takayanagi Kenjiro Mem. Symp. (Shizuoka University, Hamamatsu, Japan, Nov. 13-14, 2013) pp. S4-11-(1-5).

  1. Dopant-Atom-Based Tunnel SOI-MOSFETs (Invited)

M. Tabe, D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta; Proc. 224th ECS Meeting (San Francisco, USA, Oct. 27-Nov. 1, 2013) pp. 2243. Link

  1. Dopant-atom-based SOI-transistors by selective nanoscale doping

A. Samanta, D. Moraru, Y. Kuzuya, K. Tyszka, L. T. Anh, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe; Proc. Inter. Conf. Sol. State Dev. and Mater. (SSDM) (Fukuoka, Japan, Sept. 24-27, 2013) pp. 788-789. Link

  1. Fabrication of controlled dopant-induced quantum dots by thermal diffusion through nano-masks

D. Moraru, A. Samanta, T. Mizuno, and M. Tabe; Proc. 12th Inter. Conf. Global Res. Educat. (Sofia University, Bulgaria, Sept. 23-27 2013) pp. 14.

  1. Ab-initio study of interactive-donor states of multiple P-atoms in Si nanoplates

L. T. Anh, A. Samanta, D. Moraru, T. Mizuno, M. Muruganathan, M. Tabe, and H. Mizuta; Proc. 74th JSAP Autumn meeting 2013 (Doshisha University, Kyoto, Japan, Sept.17-20, 2013) pp. 13-187. Link

  1. Transport via dopant-quantum-dots fabricated by thermal diffusion through nano-masks

D. Moraru, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe; Proc. of 74th JSAP Autumn meeting 2013 (Doshisha University, Kyoto, Japan,  Sept.17-20, 2013) pp. 13-188. Link

  1. Transport Spectroscopy of Dopant States in Randomly-Doped Single-Electron Transistors

A. Samanta, D. Moraru, E. Hamid, Y. Kuzuya, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe; Proc. 74th JSAP Autumn meeting 2013 (Doshisha University, Kyoto, Japan,  Sept.17-20, 2013) pp. 13-186. Link

  1. Electrical characteristics of donor-induced quantum dots formed in nanoscale selectively-doped SOI-FETs

D. Moraru, A. Samanta, Y. Kuzuya, T. Nagasaka, T. Mizuno, and M. Tabe; Proc. of IEEE Silicon Nanoelectronics Workshop (Rihga Royal Hotel Kyoto, Japan, June 9-10, 2013) pp. 101-102.

  1. Electron-tunneling operation of single-dopant-atom transistors at elevated temperature – Toward room temperature operation

D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe; Proc. IEICE Elect. Dev./ Silicon Dev. and Mater. (EDSDM) Meeting, (Shizuoka University, Hamamatsu, Japan,  May 2013)

  1. Persistence of single-donor effect up to room temperature in SOI-MOSFETs

A. Samanta, E. Hamid, D. Moraru, T. Mizuno, and M. Tabe; Proc. 60th JSAP Spring Meeting 2013 (Kanagawa Institute of Technology, Japan,  March 27-30, 2013) pp. 13-188. Link

  1. Low Temperature Spontaneous Plasma Synthesis of nC-Si/SiOx Core/Shell Quantum Dot Thin Films

            D. Das and A. Samanta; Proc. Inter. Conf. Nanosci. Technol. (ICONSAT 2012) (Hotel Taj Krishna, Hyderabad, India, Jan. 20-23, 2012) pp. 137.

  1. Quantum confinement effects on opto-electronic properties of nC-Si quantum dots

            D. Das and A. Samanta; Proc. Inter. Conf. Fund. & Appl. of Nanosci. & Technol. (Jadavpur University, Dec. 9-11, 2010) pp. 185.

  1. Size Effect on Opto-electronic Properties of nC-Si Quantum Dots

D. Das and A. Samanta; Proc. of IUMRS-ICEM 2010 (Seoul KINTEX, Korea, Aug. 22-27, 2010)

  1. Highly conducting nC-SiO:H films prepared from (SiH4 + CO2 + He)-plasma by RF-PECVD

            A. Samanta and D. Das; Proc. 18th Intl. Photovol. Sci. & Eng. Conf. (Indian Association for the Cultivation of Science, Kolkata, Jan. 19-23, 2009).               pp. 229-230.

  1. Low Temperature Spontaneous Plasma Synthesis of nC-Si Quantum Dot in SiOx Matrix and Nanowire.

A. Samanta and D. Das; Proc. MRSI Young Scientist Colloquium (CGCRI, Kolkata 2012)

  1. Spontaneous Plasma Synthesis of nC-Si/SiOx Core/Shell Quantum Dot Thin Films at Low Temperature

A. Samanta and D. Das; Proc. 56th DAE Solid State Physics Symposium (SRM University, Kattankulathur, India, Dec. 19-23, 2011) pp. 119-122.  

  1. Low Temperature Direct Synthesis of nC-Si/SiOx Core/Shell Quantum dots

         A. Samanta and D. Das; Proc. 29th Young Physicist Colloquium, IPS (SINP, Kolkata, India, Aug. 18-19, 2011)

  1. Synthesis of silicon quantum dots by plasma CVD

A. Samanta and D. Das; Proc. 54th DAE Sol. State Phys. Symp. (M. S. University, Vodadara, Dec. 14-18, 2009) pp. 341-342.

  1. Properties of SiO:H films prepared from He-dilution to the SiH4 plasma

A. Samanta and D. Das; Proc. Nation. Rev. Co-ordinat. Meet. (Govt. of India, SNBNCBS, Kolkata, March 12-14, 2009)

  1. Transparent and conducting nanocrystalline SiO:H thin films for solar cells

A. Samanta and D. Das; Proc. Found. Day In-house Symp. (Indian Association for the Cultivation of Science, Kolkata, July 29, 2009)