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Biplab Sarkar
Biplab Sarkar Assistant Professor bsarkar@ece.iitr.ac.in
Areas of Interest
  • Ultra-wide bandgap VLSI Devices, Power Schottky diodes, HEMTs, LEDs, Photodetectors
Professional Background
FromToDesignationOrganisation
Dec 2018PresentAssistant ProfessorDept. of ECE, IIT Roorkee
Nov 2017Nov 2018Assistant ProfessorDept. of ECE, IIT (ISM) Dhanbad
Nov 2015Nov 2017Postdoctoral Research ScholarDept. of MSE, NC State University
Aug 2015Nov 2015Temporary Research ScholarDept. of EE, NC State University
May 2014Aug 2014R&D Engineer (summer intern)Intel Corporation
Nov 2017PresentVisiting facultyDept. of MSE, NC State University
Honors and Awards
AwardInstituteYear
Gold Medal, awarded by her excellency, Smt. P. D. Patil, Ex-President of India.NERIST2009
ECS conference travel grantNC State University2014
North-Eastern Council Scholarship for 4 consecutive years (2006-2010).NERIST2006
Educational Details
DegreeSubjectUniversityYear
PhDElectrical EngineeringNC State University2015
M. TechElectrical EngineeringIIT Bombay2012
B. TechElectronics and Communication EngineeringNERIST2010
Sponsored Research Projects
TopicFunding AgencyYear
Thermal Analysis and Modelling of Multi-finger AlGaN/GaN HEMT for RF ApplicationsSERB/DST2019
Participation in seminars
NamePlaceSponsored ByDate
Faculty Development ProgramNIT MizoramEICT, IIT Guwahati08/10/2018
Teaching Engagements
TitleCourse CodeClass NameSemester
Foundations of Semiconductor Device PhysicsECN 579Autumn
Digital Electronic Circuits LaboratoryECN 242Spring
Fundamental of ElectronicsECN-102CSE and IMScSpring
Research Scholar Groups
Scholar NameInterest
Aakash JadhavEmerging HEMT devices
Prashant UpadhyayHEMTs RF devices and sensors
Visits to outside institutions
Institute VisitedPurpose of VisitDate
NC State UniversityVisiting faculty during the summer vacation.01/05/2018
Invitations
TopicOrganistaionCategoryYear
Linking the III-nitride device properties to the threading dislocation density..Nagoya UniversityI2018
Refereed Journal Papers

1. H. Xu, J. Jiang, Y. Dai, M. Cui, K. Li, X. Ge, J. Hoo, L. Yan, S. Guo, J. Ning, H. Sun, B. Sarkar, W. Guo and J. Ye, “Polarity Control and Nanoscale Optical Characterization of AlGaN-based Multiple Quantum Wells for Ultraviolet C emitters,” ACS Applied Nano Materials (in Print, 2020)

2. M. H. Breckenridge, Q. Guo, A. Klump, B. Sarkar, Y. Guan, J. Tweedie, R. Kirste, S. Mita, P. Reddy, R. Collazo and Z. Sitar, “Shallow Si donor in ion-implanted homoepitaxial AlN,” Applied Physics Letters, 116, 172103 (2020).

3. P. Reddy, D. Khachariya, D. Szymanski, M. H. Breckenridge, B. Sarkar, S. Pavlidis, R. Collazo, Z. Sitar and E. Kohn, “Role of polarity in SiN on Al/GaN and the pathway to stable contacts,” Semiconductor Science and Technology, 35, 055007 (2020)

4. S. Washiyama, P. Reddy, B. Sarkar, M. H. Breckenridge, Q. Guo, P. Bagheri, A. Klump, R. Kirste, J. Tweedie, S. Mita, Z. Sitar and R. Collazo, “The role of chemical potential in compensation control in Si: AlGaN,” Journal of Applied Physics, 127, 105702 (2020)

5. A. Ray, S. Bordoloi, B. Sarkar, P. Agarwal and G. Trivedi, “Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMT,” Journal of Electronic Materials, vol. 49, no. 3, pp. 2018-2031 (2020)

6. B. Sarkar, P. Reddy, A. Klump, F. Kaess, R. Rounds, R. Kirste, S. Mita, E. Kohn, R. Collazo and Z. Sitar, “On Ni/Au alloyed contacts to Mg-doped GaN,” Journal of Electronic Materials, vol. 47, no. 1, pp. 305-311 (2018).

7. B. Sarkar, S. Mills, B. Lee, W. S. Pitts, V. Misra and P. D. Franzon, “On Using the Volatile Mem-capacitive Effect of TiO2 RRAM to Mimic the Synaptic Forgetting Process,” Journal of Electronic Materials, vol. 47, no. 2, pp. 994-997 (2018).

8. B. Sarkar, S. Washiyama, M. H. Breckenridge, A. Klump, J. N. Baker, P. Reddy, J. Tweedie, S. Mita, R. Kirste, D. L. Irving, R. Collazo and Z Sitar, "(Invited) N- and P- type Doping in Al-rich AlGaN and AlN," ECS Transactions, vol. 86, no. 12, pp. 25-30 (2018).

9. R. Rounds, B. Sarkar, T. Sochacki, M. Bockowski, M. Imanishi, Y. Mori, R. Kirste, R. Collazo and Z. Sitar, “Thermal Conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes,” Journal of Applied Physics, 124, 105106 (2018).

10. R. Rounds, B. Sarkar, D. Alden, Q. Guo, A. Klump, C. Hartmann,T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar and R. Collazo, “The influence of point defects on the thermal conductivity of AlN crystals,” Journal of Applied Physics, 123, 185107 (2018).

11. R. Kirste, Q. Guo, J. H. Dycus, A. Franke, S. Mita, B. Sarkar, P. Reddy, J. M. LeBeau, R. Collazo and Z. Sitar, "6 kW/cm2 UVC laser threshold in optically pumped lasers by controlling point defect formation," Applied Physics Express, 11, 082101 (2018).

12. R. Rounds, B. Sarkar, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar and R. Collazo, “The thermal conductivity of single crystalline AlN,” Applied Physics Express, 11, 071101 (2018).

13. I. Bryan, Z. Bryan, S. Washiyama, P. Reddy, B. E. Gaddy, B. Sarkar, M. H. Breckenridge, Q. Guo, M. Bobea, J. Tweedie, S. Mita, D. L. Irving, R. Collazo and Z. Sitar, “Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD,” Applied Physics Letters, 112, 062102 (2018).

14. P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama, F. Kaess, M. H. Breckenridge, B. Sarkar, B. Haidet, A. Franke, E. Kohn, R, Collazo and Z. Sitar, “Plasma Enhanced Chemical Vapor Deposition of SiO2 and SiNX on AlGaN: Band offsets and interface states as a function of Al composition,” Journal of Vacuum Science and Technology A, 36, 061101 (2018).

15. B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan, R. Kirste, E. Kohn, R. Collazo and Z. Sitar, “High free carrier concentration in p-GaN grown on AlN substrates,” Applied Physics Letters, 111, 032109 (2017).

16. B. Sarkar, B. B. Haidet, P. Reddy, R. Kirste, R. Collazo and Z. Sitar, “Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate by reactive ion etching surface treatment,” Applied Physics Express, 10, 071001 (2017).

17. B. Sarkar, P. Reddy, F. Kaess, B. B. Haidet, J. Tweedie, S. Mita, R. Kirste, E. Kohn, R. Collazo and Z. Sitar, “(Invited) Material considerations for the development of III-nitride power devices,” ECS Transactions, vol. 80, no. 7, pp. 29-36 (2017).

18. P. Reddy, B. Sarkar, F. Kaess, M. Gerhold, E. Kohn, R. Collazo and Z. Sitar, “Defect-free Ni/GaN Schottky barrier behavior with high temperature stability,” Applied Physics Letters, 110, 011603 (2017).

19. B. B. Haidet, B. Sarkar, P. Reddy, I. Bryan, Z. Bryan, R. Kirste, R. Collazo and Z. Sitar, “Nonlinear analysis of Vanadium- and Titanium-based contacts to Al-rich n-AlGaN,” Japanese Journal of Applied Physics, 56, 100302 (2017).

20. P. Reddy, S. Washiyama, F. Kaess, M. H. Breckenridge, L. H. Hernandez-Balderrama, B. B. Haidet, D. Alden, A. Franke, B. Sarkar, E. Kohn, R. Collazo and Z. Sitar, “High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: band offset and passivation studies,” Journal of Applied Physics, 119, 145702 (2016).

21. B. Sarkar, B. Lee and V. Misra, “Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications,” Semiconductor Science and Technology, 30, 105014 (2015).

22. B. Sarkar, N. Ramanan, S. Jayanti, N. D. Spigna, B. Lee, P. Franzon and V. Misra, “Dual floating gate unified MOSFET with simultaneous volatile and non-volatile operation,” IEEE Electron Device Letters, vol.35, no.1, pp.48-50 (2014).

23. B. Sarkar, B. Lee, and V. Misra, "Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process," ECS Transactions, vol. 64. no. 14, pp. 43-48 (2014).

Miscellaneous
  • Reviewer of following Journals: 1. IEEE Transactions on Electron Devices. 2. IEEE Electron Device Letters. 3. Semiconductor Science and Technology. 4. Journal of Physics D: Applied Physics. 5. Physica Status Solidi A. 6. ECS Journal of Solid State Science and Technology. 7. Journal of Alloys and Compounds