It is technique used for the fabrication of uniform thin films on large no of substrates.

Specifications:

Pressure range: 65k Pa

Working temperature:15^oC to 25^oC

Maximum no of programmes stored: 20

Maximum no of steps: 100

Acceleration: 0-2000 rpm/sec

Speed: 0-6000 rpm

Time: 0-1000 sec

Active relay: 1,2